Datasheet > STP5NK100Z_09

STP5NK100Z_09

更新时间： 2024-01-16 11:45:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	459K
描述
N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET

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STP5NK100Z_09 数据手册

STP5NK100Z, STF5NK100Z

STW5NK100Z

N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247

SuperMESH3™ Power MOSFET

Features

V_DSS

(@T_JMAX

Type

_DS(on)max

I_D

)

STF5NK100Z

STP5NK100Z

STW5NK100Z

1000 V

< 3.7 Ω

3.5 A

TO-220

TO-220FP

■ Extremely high dv/dt capability

■ 100% avalanche tested

■ Gate charge minimized

TO-247

■ Very low intrinsic capacitances

■ Very good manufacturing repeatibility

Applications

Figure 1.

Internal schematic diagram

■ Switching application

D(2)

Description

The new SuperMESH™ series of Power

MOSFETS is the result of further design

improvements on ST's well-established strip-

based PowerMESH™ layout. In addition to

significantly lower on-resistance, the device offers

superior dv/dt capability to ensure optimal

performance even in the most demanding

applications. The SuperMESH™ devices further

complement an already broad range of innovative

high voltage MOSFETs, which includes the

revolutionary MDmesh™ products.

G(1)

S(3)

AM01476v1

Table 1.

Device summary

Order code

Marking

Package

Packaging

STF5NK100Z

STP5NK100Z

STW5NK100Z

F5NK100Z

P5NK100Z

W5NK100Z

TO-220FP

TO-220

Tube

TO-247

May 2009

Doc ID 10850 Rev 5

1/15

www.st.com

12 3 4 5 6 7...15

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