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STM-1116

更新时间: 2024-01-12 05:34:31
品牌 Logo 应用领域
SIRENZA 射频微波局域网
页数 文件大小 规格书
6页 183K
描述
800 - 1000 MHz High Linearity Active Transmit Mixer

STM-1116 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.77
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENTJESD-609代码:e0
最大工作频率:1000 MHz最小工作频率:800 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:DOUBLE BALANCED端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

STM-1116 数据手册

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Preliminary  
Product Description  
STM-1116  
The Sirenza Microdevices’ STM-1116 is a high linearity  
active mixer for use in a wide variety of communication  
systems covering the 800-1000 MHz frequency bands.  
This device operates from a single 5V supply and provides  
14 dB of conversion gain while requiring only 0dBm input  
to the integrated LO driver. The STM-1116 also includes an  
integrated on chip IF amplifier and is fabricated using Sili-  
con Germanium (SiGe) device technology.  
800 - 1000 MHz High Linearity  
Active Transmit Mixer  
The RF and LO ports can be driven differential or single  
ended. Each broadband port has been designed to mini-  
mize performance degradation while operating into highly  
reactive components such as SAW filters. The device is  
packaged in an industry standard 16 pin TSSOP with  
exposed paddle for superb RF and thermal ground.  
16 pin TSSOP with Exposed Ground Pad  
Package Footprint: 0.197 x 0.252 inches (5.0 x 6.4 mm)  
Package Height: 0.039 inches (1.0 mm)  
Product Features  
Active mixer with 14 dB conversion gain  
Functional Block Diagram  
Integrated 0dBm LO drive and IF amplifier  
Differential or single-ended input  
Single supply operation (+5V)  
Broadband resistive 50impedance on all  
three ports  
VEE  
VCC  
VEE  
RFN  
RFP  
VEE  
VCC  
IFN  
1
2
3
4
5
6
7
8
16 VEE  
15 VCC  
14 VEE  
13 LON  
12 LOP  
11 VEE  
10 VCC  
Low LO-RF leakage  
Applications  
AMPS/GSM/CDMA800 tansmitters  
9
IFP  
Product Specifications  
Test Conditions: TA = 25ºC, VCC = 5.0V,  
Parameters  
Unit  
Min.  
Typ.  
Max.  
Min.  
Typ.  
Max.  
P
LO = 0dBm, PIF = -20dBm, IF = 200MHz  
RF Frequency Range  
LO Frequency Range  
IF Frequency Range  
Conversion Gain  
SSB Noise Figure  
Output IP3  
MHz  
MHz  
MHz  
dB  
800  
600  
30  
900  
700  
400  
16  
900  
700  
30  
1000  
800  
400  
16  
200  
12  
200  
14  
9
11  
dB  
9.0  
21  
11  
9.0  
22  
11  
IF1 = IF2 = -20 dBm/tone, 1 MHz spacing  
dBm  
dBm  
dBm  
dBm  
dB  
17  
5
19  
6
Output P1dB  
7
8.5  
-30  
-35  
14  
Leakage (LO-RF)  
Leakage (LO-IF)  
-35  
-40  
14  
-25  
-30  
-20  
-25  
RF, LO, IF Return Loss Matched to 50, see Note 1, page 3  
Supply Voltage (Vcc)  
V
+4.75  
-3  
+5.0  
200  
0
+5.25  
+3  
+4.75  
-3  
+5.0  
200  
0
+5.25  
+3  
Supply Current  
mA  
LO Drive  
Matched to 50Ω  
dBm  
ºC/W  
Thermal Resistance  
junction-case  
25  
25  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.  
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without  
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product  
for use in life-support devices and/or systems.  
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.  
522 Almanor Ave., Sunnyvale, CA 94085  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS102185 Rev B  

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