Datasheet > STL16N60M6

STL16N60M6

更新时间： 2023-12-20 18:44:37

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	883K
描述
N沟道600 V、0.29 Ohm典型值、12 A MDmesh M6功率MOSFET，PowerFLAT 5x6 HV封装

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STL16N60M6 数据手册

STL16N60M6

Electrical characteristics

Min. Typ. Max. Unit

Table 8: Source drain diode

Test conditions

Symbol

I_SD

Parameter

Source-drain current

(pulsed)

(1)

I_SDM

1.6

(2)

V_SD

t_rr

Forward on voltage

V_GS= 0 V, I_SD= 8 A

Reverse recovery time

Reverse recovery charge

210

1.7

µC

I_SD= 12 A, di/dt = 100 A/µs,

V_DD= 60 V

(see Figure 16: "Test circuit

for inductive load switching

and diode recovery times")

Q_rr

I_RRM

Reverse recovery current

13.8

t_rr

Reverse recovery time

310

3.2

I_SD= 12 A, di/dt = 100 A/µs,

V_DD= 60 V, T_j= 150 °C

(see Figure 16: "Test circuit

for inductive load switching

and diode recovery times")

Q_rr

Reverse recovery charge

µC

I_RRM

Reverse recovery current

15.4

Notes:

⁽¹⁾Pulse width is limited by safe operating area.

⁽²⁾Pulse test: pulse duration = 300 µs, duty cycle 1.5%

DocID030476 Rev 1

5/15

1 2 3 456 7 8...15

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