Datasheet > STFH10N60M2

STFH10N60M2

更新时间： 2024-10-02 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	411K
描述
N沟道600 V、0.55 Ohm典型值、7.5 A MDmesh M2功率MOSFET，TO-220FP宽沿面封装

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技术参数
数据手册

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STFH10N60M2 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	1.71
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STFH10N60M2 数据手册

STFH10N60M2

Datasheet

N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP

wide creepage package

Features

at T

DS(on)

max.

Order code

Jmax.

STFH10N60M2

650 V

0.60 Ω

7.5 A

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

TO-220FP wide creepage

D(2)

Zener-protected

Wide distance of 4.25 mm between the pins

G(1)

Applications

•

Switching applications

LLC converters, resonant converters

S(3)

AM15572v1_no_tab

Description

This device is an N-channel Power MOSFET developed using MDmesh M2

technology. Thanks to its strip layout and an improved vertical structure, the device

exhibits low on-resistance and optimized switching characteristics, rendering it

suitable for the most demanding high efficiency converters.

The TO-220FP wide creepage package provides increased surface insulation for

Power MOSFETs to prevent failure due to arcing, which can occur in polluted

environments.

Product status link

STFH10N60M2

Product summary

Order code

STFH10N60M2

10N60M2

Marking

Package

Packing

TO-220FP wide

creepage

Tube

DS11690 - Rev 5 - January 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

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