Datasheet > STFH24N60M2

STFH24N60M2

更新时间： 2024-10-02 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	730K
描述
N沟道600 V、0.168 Ohm典型值、18 A MDmesh M2功率MOSFET，TO-220FP宽沿面封装

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STFH24N60M2 数据手册

STFH24N60M2

N-channel 600 V, 0.168 Ω typ., 18 A MDmesh™ M2

Power MOSFET in a TO-220FP wide creepage package

Datasheet - production data

Features

Order code

V_DS@ T_Jmax

R_DS(on)max

I_D

STFH24N60M2

650 V

0.19 Ω

18 A



Extremely low gate charge

Excellent output capacitance (C_OSS) profile

100% avalanche tested

Zener-protected

Wide creepage distance of 4.25 mm

between the pins

Applications



Switching applications

LLC converters, resonant converters

Description

Figure 1: Internal schematic diagram

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

D(2)

G(1)

The TO-220FP wide creepage package provides

increased surface insulation for Power MOSFETs

to prevent failure due to arcing, which can occur

in polluted environments.

S(3)

AM15572v1_no_tab

Table 1: Device summary

Package

TO-220FP wide creepage

Order code

Marking

24N60M2

Packing

STFH24N60M2

Tube

June 2016

DocID029415 Rev 2

1/12

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...12

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