Datasheet > STFH12N105K5

STFH12N105K5

更新时间： 2024-10-02 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	339K
描述
N-channel 1050 V, 0.90 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package

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STFH12N105K5 数据手册

STFH12N105K5

Datasheet

N‑channel 1050 V, 0.90 Ω typ., 8 A MDmesh K5

Power MOSFET in a TO‑220FP wide creepage package

Features

DS(on)

max.

TOT

Order code

STFH12N105K5

1050 V

1.00 Ω

8 A

29 W

•

Industry's lowest R_DS(on)* area

Industry's best figure of merit (FoM)

Ultra low gate charge

TO-220FP wide creepage

D(2)

100% avalanche tested

Zener-protected

Wide creepage distance of 4.25 mm between the pins

G(1)

Applications

•

Switching applications

S(3)

AM15572v1_no_tab

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh

K5 technology based on an innovative proprietary vertical structure. The result is

a dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STFH12N105K5

Product summary

Order code

STFH12N105K5

12N105K5

Marking

Package

Packing

TO-220FP wide

creepage

Tube

DS13596 - Rev 2 - December 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

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