Datasheet > STFH10N60M6

STFH10N60M6

更新时间： 2024-10-02 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	547K
描述
N沟道600 V、520 mOhm典型值、6.4 A MDmesh M6功率MOSFET，TO-220FP宽沿面封装

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技术参数
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STFH10N60M6 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	16 weeks	风险等级：	5.76
Base Number Matches：	1

STFH10N60M6 数据手册

STFH10N60M6

Datasheet

N-channel 600 V, 520 mΩ typ., 6.4 A MDmesh M6 Power MOSFET in a

TO-220FP wide creepage package

Features

DS(on)

max.

Order code

Jmax

STFH10N60M6

650 V

600 mΩ

6.4 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-220 FP wide creepage

D(2)

Zener-protected

G(1)

Applications

•

Switching applications

LLC converters, resonant converters

Boost PFC converters

S(3)

AM15572v1_no_tab

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

The TO-220FP wide creepage package provides increased surface insulation for

Power MOSFETs to prevent failure due to arcing, which can occur in polluted

environments.

Product status link

STFH10N60M6

Product summary

Order code

Marking

STFH10N60M6

10N60M6

TO-220FP wide

creepage

Package

Packing

Tube

DS12910 - Rev 2 - May 2019

www.st.com

For further information contact your local STMicroelectronics sales office.

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