Datasheet > STC4539S8RG

STC4539S8RG

更新时间： 2025-07-16 01:15:07

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
10页	454K
描述
N&P Pair Enhancement Mode MOSFET

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中文翻译

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数据手册

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STC4539S8RG 数据手册

STC4539

N&P Pair Enhancement Mode MOSFET

6.8A / -6.2A

℃

ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted )

Typical

Parameter

Drain-Source Voltage

Symbol

V_DSS

V_GSS

I_D

Unit

-30

Gate-Source Voltage

T^A=25℃

Continuous Drain Current

6.8

5.6

-6.2

-4.6

℃

(TJ=150 )

℃

T_A=70

Pulsed Drain Current

I_DM

-30

Continuous Source Current

(Diode Conduction)

I_S

2.3

-2.3

T^A=25℃

2.5

1.6

2.8

1.8

Power Dissipation

P_D

℃

T_A=70

Operation Junction Temperature

T_J

150

-55/150

Storgae Temperature Range

Thermal Resistance-Junction

T_STG

T≦10Sec

Sready State

℃

Rθ

to Ambient

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STC4539 2007. V1

123 4 5 6 7...10

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