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STB1277-O

更新时间: 2024-01-21 19:43:49
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
1页 66K
描述
PNP Plastic Encapsulated Transistor

STB1277-O 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:compliant风险等级:5.69
最大集电极电流 (IC):2 A配置:Single
最小直流电流增益 (hFE):100最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

STB1277-O 数据手册

  
STB1277  
-2A , -30V  
PNP Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
TO-92  
FEATURES  
General Purpose Switching and Amplification.  
High Total Power Dissipation.  
High hFE and Good Linearity  
CLASSIFICATION OF hFE  
Product-Rank  
STB1277-O  
STB1277-Y  
160~320  
Range  
100~200  
1Emitter  
2Collector  
3Base  
Collector  
2
Millimeter  
Millimeter  
3
Base  
REF.  
REF.  
Min.  
4.40  
4.30  
12.70  
3.30  
0.36  
Max.  
4.70  
4.70  
-
3.81  
0.56  
Min.  
Max.  
A
B
C
D
E
F
G
H
J
0.30  
0.51  
1.27 TYP.  
1.10  
2.42  
0.36  
1.40  
2.66  
0.76  
1
Emitter  
K
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector to Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-30  
Unit  
V
V
Collector to Emitter Voltage  
Emitter to Base Voltage  
-30  
-5  
V
Collector Current - Continuous  
Collector Power Dissipation  
Junction, Storage Temperature  
-2  
A
PC  
0.625  
W
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
Typ  
Max  
Unit  
V
Test condition  
Collector to Base Breakdown Voltage  
Collector to Emitter Breakdown Voltage  
Emitter to Base Breakdown Voltage  
Collector Cut-Off Current  
-30  
-
-
-
IC= -0.1mA, IE=0  
IC= -1mA, IB=0  
-30  
-
V
-5  
-
-
V
IE= -1mA, IC=0  
-
-
-0.1  
-0.1  
320  
-0.8  
-1  
µA  
µA  
VCB= -30V, IE=0  
VEB= -5V, IC=0  
Emitter Cut-Off Current  
IEBO  
-
-
-
DC Current Gain  
hFE  
100  
VCE= -2V, IC= -500mA  
IC= -2A, IB= -0.2A  
IC= -500mA, VCE= -2V  
Collector to Emitter Saturation Voltage  
Base to Emitter Saturation Voltage  
Transition Frequency  
VCE(sat)  
VBE(sat)  
fT  
-
-
-
-
-
V
V
-
170  
48  
-
MHz VCE= -5V, IC= -50mA  
pF VCB= -10V, IE=0, f=1MHz  
Collector Output Capacitance  
Cob  
-
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
08-May-2013 Rev. A  
Page 1 of 1  

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