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STAC4932B PDF预览

STAC4932B

更新时间: 2024-11-22 14:58:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 脉冲晶体管
页数 文件大小 规格书
13页 295K
描述
1200W脉冲 - 100V HF/VHF DMOS晶体管,STAC封装

STAC4932B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-CDFM-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:32 weeks风险等级:2.27
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:200 VFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

STAC4932B 数据手册

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STAC4932B  
Datasheet  
HF/VHF/UHF RF power N-channel MOSFET  
Features  
1
V
P
OUT  
Order code  
STAC4932B  
Frequency  
Gain  
Efficiency  
1
DD  
123 MHz  
100 V  
1000 W  
24.6 dB  
60 %  
2
Excellent thermal stability  
Common source push-pull configuration  
3
3
POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz  
Pulse conditions: 1ms, 10%  
STAC780-4B  
In compliance with the 2002/95/EC European directive  
ST air-cavity STAC package technology  
Pin connection  
Connection  
Drain  
Pin  
1
Description  
2
Source (bottom side)  
Gate  
The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended  
for 100 V pulse applications up to 250 MHz. This device is suitable for use in  
industrial, scientific and medical applications. The STAC4932B benefits from the  
latest generation of efficient, patent-pending STAC package technology.  
3
Product status  
STAC4932B  
Product summary  
Order code  
Marking  
STAC4932B  
STAC4932  
STAC780-4B  
Box  
Package  
Packing  
Base / Bulk qty  
20 / 80  
DS6724 - Rev 8 - April 2020  
www.st.com  
For further information contact your local STMicroelectronics sales office.  

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