Datasheet > ST8550E

ST8550E

更新时间： 2022-02-26 11:36:32

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
5页	105K
描述
PNP Silicon Epitaxial Planar Transistor

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数据手册

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ST8550E 数据手册

8550

Admissible power dissipation

versus ambient temperature

Collector current

versus base emitter voltage

Valid provided that leads are kept at

ambient temperature

at a distance of 2 mm from case

10 ³

ST 8550

0.8

0.6

0.4

0.2

25^oC

-50^oC

10 ²

150 ^oC

typical

limits

at Tamb=25 C

Ptot

-IC

10 ^-1

200 ^oC

2 V

100

Tamb

-VBE

Pulse thermal resistance

versus pulse duration

Valid provided that leads are kept at

ambient temperature

Collector cutoff current

versus ambient temperature

at a distance of 2 mm from case

ST 8550

K/W

10³

ST 8550

-ICES

10²

0.5

rthA

0.2

0.1

0.05

0.02

0.01

0.005

v=0

P^I

10 ^-1

-1

-6

-4

-5

-2

-3

10 S

10 10 10

100

Tamb

1 234 5

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