Datasheet > ST8550E

ST8550E

更新时间： 2022-02-26 11:36:32

品牌	Logo	应用领域
南晶电子 - DGNJDZ		/
页数	文件大小	规格书
5页	105K
描述
PNP Silicon Epitaxial Planar Transistor

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数据手册

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ST8550E 数据手册

8550

Characteristics at T_amb=25 ^OC

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

ST 8550B

ST 8550C

ST 8550D

ST 8550E

h_FE

120

160

300

120

200

300

380

at -V_CE=1V, -I_C=100mA

at -V_CE=1V, -I_C=350mA

Collector Cutoff Current

at -V_CB=35V

I_CBO

V_CE(sat)

V_BE(sat)

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

f_T

100

Collector Saturation Voltage

at -I_C=500mA, -I_B=50mA

Base Saturation Voltage

at -I_C=500mA, -I_B=50mA

Collector Emitter Breakdown Voltage

at -I_C=2mA

0.5

1.2

Collector Base Breakdown Voltage

at -I_C=10μA

Emitter Base Breakdown Voltage

at -I_E=100μA

Gain Bandwidth Product

at -V_CE=5V, -I_C=10mA, f=50MHz

Collector Base Capacitance

at -V_CB=10V, f=1MHz

100

MHz

C_CBO

R_thA

Thermal Resistance Junction to Ambient

200¹⁾

K/W

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

123 4 5

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