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ST6G3244MEBJR PDF预览

ST6G3244MEBJR

更新时间: 2024-11-23 01:19:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 接口集成电路
页数 文件大小 规格书
27页 662K
描述
Level translator for SD, SDIO, mini SD, and micro SD Cards with internal I/O supply and ±15 kV ESD protection

ST6G3244MEBJR 技术参数

生命周期:Active零件包装代码:BGA
包装说明:2 X 2 MM, 0.605 HEIGHT, 0.40 MM PITCH, ROHS COMPLIANT, BGA-25针数:25
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:24 weeks风险等级:1.45
接口集成电路类型:INTERFACE CIRCUITJESD-30 代码:S-PBGA-B25
长度:2 mm功能数量:1
端子数量:25最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA25,5X5,16
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8 V
认证状态:Not Qualified座面最大高度:0.65 mm
子类别:Level Translators最大供电电压:1.98 V
最小供电电压:1.62 V标称供电电压:1.8 V
电源电压1-最大:5 V电源电压1-分钟:3 V
电源电压1-Nom:3.4 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.4 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mmBase Number Matches:1

ST6G3244MEBJR 数据手册

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ST6G3244ME  
Level translator for SD, SDIO, mini SD, and micro SD Cards  
with internal I/O supply and 15 kV ESD protection  
Features  
Supports 60 MHz clock rate  
Supports DDR mode for SD Card™  
Compliant with  
– SD Specification Part 1 Physical Layer  
Specification 3.00 (SDR12, SDR25,  
DDR50)  
– SD Specification Part 1 Physical Layer  
Specification 2.00  
Flip Chip 25  
Bi-directional with direction control pin  
Balanced propagation delays: t  
t  
PHL  
PLH  
LDO power-down support. When the LDO is  
powered down, V is pulled to GND via  
Operating temperature range –40 °C to +85 °C  
CCB  
the 130 Ω resistor. When V  
= 0 V, there is  
Space-saving Flip Chip 25 package  
CCB  
no additional leakage seen on V  
.
(2 x 2 x 0.605 mm, 0.4 mm bump pitch)  
CCA  
EMI filtering and signal conditioning  
RoHS compliant, lead-free soldering capable  
Supports both 1.8 V and 2.9 V data translation  
on card side  
Applications  
Integrated LDO to supply 1.8 V or 2.9 V power  
for B-side I/Os (pin-selectable); can be used  
also externally  
Mobile phones, smartphones  
PDAs  
Cameras  
Integrated pull-up and pull-down resistors on  
B-side  
SD Card readers  
Any device with SD memory card  
Operating voltage range  
– V  
– V  
= 1.62 V to 1.98 V  
= 3.0 V to 5.0 V  
CCA  
BAT  
Table 1.  
Device summary  
Package  
topmark  
Latch-up performance exceeds 100 mA  
Order code  
Package  
Packing  
(JEDEC Standard 78)  
ESD protection for card side (B-port, CD and  
Flip Chip 25  
2 x 2 x  
ST6G3244MEBJR 0.605 mm,  
0.4 mm  
Tape  
and reel  
(5000  
partsper  
reel)  
WP pins)  
VKH,  
VKV  
8 kV contact discharge (IEC61000-4-2)  
15 kV air-gap discharge (IEC61000-4-2)  
bump pitch  
ESD protection for host side (A-side)  
2 kV HBM (JEDEC 22-A114)  
200 V MM (JEDEC 22-A115)  
November 2011  
Doc ID 022157 Rev 2  
1/27  
www.st.com  
1
 
 
 
 

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