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ST500B120CTXV PDF预览

ST500B120CTXV

更新时间: 2024-01-29 21:09:54
品牌 Logo 应用领域
SSDI 局域网二极管
页数 文件大小 规格书
2页 141K
描述
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, MINISTUD PACKAGE-1

ST500B120CTXV 技术参数

生命周期:Active包装说明:O-XUPM-X1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.73配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-XUPM-X1最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:1
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:POST/STUD MOUNT极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
表面贴装:NO技术:AVALANCHE
端子形式:UNSPECIFIED端子位置:UPPER
Base Number Matches:1

ST500B120CTXV 数据手册

 浏览型号ST500B120CTXV的Datasheet PDF文件第2页 
ST500A7.5  
thru  
ST500A270  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
FEATURES:  
500 W Transient Voltage  
Suppressor  
Hermetically Sealed in Glass  
High Peak Transient Power 500 W  
Can Be Used as a 5 W Zener  
7.5 – 510 VOLTS  
Available in Axial, Surface Mount, and Ministud  
Configurations  
TX, TXV, and Space Level Screening Available2/  
Higher Voltages Available  
Axial  
Part Number / Ordering Information 1/  
ST500  
A
9.6 SMS TX  
Screening 2/ __= Not Screened  
TX = TX Level  
DIM  
A
B
C
D
MIN  
––  
––  
0.047”  
1.0”  
MAX  
0.158”  
0.185”  
0.053”  
––  
TXV = TXV Level  
S= S Level  
Package: 3/  
= Axial  
SMS  
SMS = Square Tab  
V = Isolated Ministud  
C = Ministud  
Voltage: 9.6 = 9.6V  
Tolerance A = ± 10%  
B = ± 5 %  
DIM  
A
B
C
D
MIN  
MAX  
0.160”  
0.225”  
0.027”  
––  
0.155"  
0.200”  
0.018”  
0.001”  
Isolated Ministud  
Maximum Ratings  
Symbol Value Units  
Peak pulse power dissipation with  
a 10/1000 μs waveform  
PPPM  
500  
W
W
ºC  
Steady State Power Dissipation  
Axial Lead : TL=25ºC, L=3/8"  
SMS & Ministud: TC or TE = 75 ºC  
PD  
5.0  
-65 to  
+175  
Operating and Storage Temp.  
Top & Tstg  
Maximum Forward Voltage Drop  
IF = 1.0 Apk, TA = 25 ºC, pulsed  
Ministud  
VF  
1.2  
25  
V
Thermal Resistance,  
Junction to Lead L=3/8”  
ºC/W  
ΡθJL  
Thermal Resistance,  
Junction to End Cap  
Junction to Case  
RθJE  
RθJC  
8
ºC/W  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: T00023D  
DOC  

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