Datasheet > ST333C08CDN2

ST333C08CDN2

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	245K
描述
Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, METAL, EPUK-3

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ST333C08CDN2 数据手册

ST333C..C Series

Inverter Grade Thyristors

(Hockey PUK Version), 720 A

Vishay High Power Products

1 E4

200

50 Hz

100

400

200

400

100

500

50 H z

500

1000

1500

2500

Snubb er circuit

2500

3000

5000

1 E3

= 10 ohms

= 0.47 µF

3000

80% V

DRM

5000

ST333C ..C Series

Sinusoidal pulse

ST333C..C Series

Sin usoidal pulse

= 55°C

t p

= 40°C

1 E2

1 E1

1E2

1E3

1E4

1 E1

1E2

1E3

1 E4

Pu lse B a sew id th (µ s)

P ulse B a sew id th (µ s)

Fig. 13 - Frequency Characteristics

1E4

1E3

1E2

Snubber circuit

= 10 ohms

= 0.47 µF

= 80% V DRM

200 100

50 Hz

400

50 Hz

100

500

200

1000

1500

2000

400

500

1000

Snubber circuit

1500

2000

2500

3000

= 10 ohms

2500

= 0.47 µF

80% V

DRM

3000

ST333C..C Series

Trapezoidal p ulse

ST333C..C Series

Trap ezoid al p ulse

5000

= 55°C

= 40°C

5000

di/dt = 100A/µs

di/d t = 50A/µs

1E 1

1 E2

1 E3

1 E4

1 E1

1E2

1E3

1 E4

P u lse Ba sew id th (µs)

P u lse Ba se w id th (µ s)

Fig. 14 - Frequency Characteristics

1 E4

1 E3

1 E2

Snubber circuit

= 10 ohms

= 0.47 µF

= 80% V

DR M

50 Hz

100

200 100

200

400

500

400

500

1000

1500

2000

2500

3000

1000

Snubb er circuit

1500

2000

2500

= 10 ohms

= 0.47 µ F

= 80% V

DRM

ST333C..C Series

Trapezoid al p ulse

3000

ST333C..C Series

Trapezoidal pulse

= 55°C

5000

40°C

5000

di/dt = 100A/µs

d i/dt = 100A/µs

1E1

1E 2

P u lse Ba sew id th (µ s)

1 E3

1 E4

1 E1

1 E2

1E3

1E4

P u lse B asew id th (µ s)

Fig. 15 - Frequency Characteristics

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Document Number: 93678

Revision: 15-May-08

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