Datasheet > ST333C08CDN2LPBF

ST333C08CDN2LPBF

更新时间： 2023-02-26 13:52:24

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	266K
描述
Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, EPUK-3

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ST333C08CDN2LPBF 数据手册

Bulletin I25238 10/06

ST333CPbF SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (E-PUK)

All diffused design

720A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

Typical Applications

Inverters

Choppers

Induction heating

case style TO-200AB (E-PUK)

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST333C..C

Units

720

°C

@ T

I_T(RMS)

1435

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

11000

11500

605

I²t

KA²s

553

V_DRM/V_RRM

400 to 800

10 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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与ST333C08CDN2LPBF相关器件

型号	品牌	描述	获取价格	数据表
ST333C08CDN2P	VISHAY	Silicon Controlled Rectifier, 1435A I(T)RMS, 750000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格
ST333C08CDN3	VISHAY	Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格
ST333C08CDN3L	INFINEON	Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格
ST333C08CDN3LP	VISHAY	Silicon Controlled Rectifier, 1435A I(T)RMS, 750000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格
ST333C08CDN3P	VISHAY	Silicon Controlled Rectifier, 1435A I(T)RMS, 750000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格
ST333C08CDP0	INFINEON	Silicon Controlled Rectifier, 1435A I(T)RMS, 720000mA I(T), 800V V(DRM), 800V V(RRM), 1 El	获取价格