5秒后页面跳转
ST303C10CCL1LP PDF预览

ST303C10CCL1LP

更新时间: 2024-11-24 05:03:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
10页 309K
描述
Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, ROHS COMPLIANT, CERAMIC, EPUK-3

ST303C10CCL1LP 数据手册

 浏览型号ST303C10CCL1LP的Datasheet PDF文件第2页浏览型号ST303C10CCL1LP的Datasheet PDF文件第3页浏览型号ST303C10CCL1LP的Datasheet PDF文件第4页浏览型号ST303C10CCL1LP的Datasheet PDF文件第5页浏览型号ST303C10CCL1LP的Datasheet PDF文件第6页浏览型号ST303C10CCL1LP的Datasheet PDF文件第7页 
ST303CPbF Series  
Vishay High Power Products  
Inverter Grade Thyristors  
(PUK Version), 620 A  
FEATURES  
• Metal case with ceramic insulator  
• All diffused design  
• Center amplifying gate  
• Guaranteed high dV/dt  
RoHS  
COMPLIANT  
• Guaranteed high dI/dt  
• International standard case TO-200AB (E-PUK)  
• High surge current capability  
• Low thermal impedance  
TO-200AB (E-PUK)  
• High speed performance  
• Lead (Pb)-free  
• Designed and qualified for industrial level  
TYPICAL APPLICATIONS  
• Inverters  
PRODUCT SUMMARY  
IT(AV)  
620 A  
• Choppers  
• Induction heating  
• All types of force-commutated converters  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
620  
UNITS  
A
°C  
A
IT(AV)  
Ths  
55  
1180  
IT(RMS)  
ITSM  
I2t  
Ths  
25  
°C  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
7950  
A
8320  
316  
kA2s  
289  
V
DRM/VRRM  
400 to 1200  
10 to 30  
- 40 to 125  
V
tq  
Range  
µs  
°C  
TJ  
Note  
• tq = 10 to 20 µs for 400 to 800 V devices  
tq = 15 to 30 µs for 1000 to 1200 V devices  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VOLTAGE  
V
DRM/VRRM, MAXIMUM  
V
RSM, MAXIMUM  
IDRM/IRRM MAXIMUM  
TYPE NUMBER  
REPETITIVE PEAK VOLTAGE  
V
NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM  
CODE  
V
mA  
04  
08  
10  
12  
400  
800  
500  
900  
ST303C..C  
50  
1000  
1200  
1100  
1300  
Document Number: 94373  
Revision: 25-Jul-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

与ST303C10CCL1LP相关器件

型号 品牌 获取价格 描述 数据表
ST303C10CCL2P VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCL3 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCL3LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCP0LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCP1 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCP2 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCP2L VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)
ST303C10CCP2LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CCP3LP VISHAY

获取价格

Silicon Controlled Rectifier, 1180A I(T)RMS, 620000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
ST303C10CDH0 VISHAY

获取价格

Silicon Controlled Rectifier, 620000mA I(T), 1000V V(DRM)