Datasheet > ST203C10CFH2LPBF

ST203C10CFH2LPBF

更新时间： 2024-12-01 06:26:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	174K
描述
Silicon Controlled Rectifier, 700A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200AB, METAL CASE WITH CERAMIC INSULATOR, APUK-3

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ST203C10CFH2LPBF 数据手册

Bulletin I25176 rev. B 04/00

ST203C..C SERIES

INVERTER GRADE THYRISTORS

Hockey Puk Version

Features

Metal case with ceramic insulator

International standard case TO-200AB (A-PUK)

All diffused design

370A

Center amplifying gate

Guaranteed high dV/dt

Guaranteed high dI/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

case style TO-200AB (A-PUK)

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST203C..C

Units

370

°C

@ T

I_T(RMS)

700

@ T

°C

I_TSM

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

5260

5510

138

126

I²t

KA²s

V_DRM/V_RRM

1000 to 1200

20 to 30

t range

µs

T_J

- 40 to 125

°C

www.irf.com

12 3 4 5 6 7...9

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ST203C10CFH2L-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR
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ST203C10CFH3LP	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
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ST203C10CFJ0	INFINEON	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST203C10CFJ0L	INFINEON	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST203C10CFJ0LP	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST203C10CFJ0L-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR
ST203C10CFJ0P	VISHAY	获取价格	Silicon Controlled Rectifier, 700A I(T)RMS, 370000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST203C10CFJ0-PBF	VISHAY	获取价格	Silicon Controlled Rectifier, SCR