Datasheet > ST173S10MCK1LPBF

ST173S10MCK1LPBF

更新时间： 2024-12-02 08:48:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	132K
描述
Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB

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ST173S10MCK1LPBF 数据手册

Bulletin I25181 rev. C 12/96

ST173S SERIES

Stud Version

INVERTER GRADE THYRISTORS

Features

175A

All diffused design

Center amplifying gate

Guaranteed high dv/dt

Guaranteed high di/dt

High surge current capability

Low thermal impedance

High speed performance

TypicalApplications

Inverters

Choppers

Induction heating

All types of force-commutated converters

Major Ratings and Characteristics

Parameters

I_T(AV)

ST173S

175

Units

@ T_C

°C

I_T(RMS)

I_TSM

275

4680

@ 50Hz

@ 60Hz

@ 50Hz

@ 60Hz

4900

I²t

110

KA²s

100

V_DRM/V_RRM

1000 to 1200

15 to 25

- 40 to 125

case style

TO-209AB (TO-93)

range

µs

T_J

°C

www.irf.com

12 3 4 5 6 7...9

中文翻译

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与ST173S10MCK1LPBF相关器件

型号	品牌	获取价格	描述	数据表
ST173S10MCK1PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCK2	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCK2L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCK2PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCL0L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCL0PBF	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCL1L	INFINEON	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209A
ST173S10MCL1PBF	VISHAY	获取价格	Silicon Controlled Rectifier, 275A I(T)RMS, 175000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E
ST173S10MCL2	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)
ST173S10MCL2L	VISHAY	获取价格	Silicon Controlled Rectifier, 175000mA I(T), 1000V V(DRM)