是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | BUTTON | 包装说明: | DISK BUTTON, O-CEDB-N2 |
针数: | 3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.58 |
其他特性: | HIGH SPEED | 标称电路换相断开时间: | 25 µs |
配置: | SINGLE | 关态电压最小值的临界上升速率: | 500 V/us |
最大直流栅极触发电流: | 200 mA | 最大直流栅极触发电压: | 3 V |
最大维持电流: | 600 mA | JEDEC-95代码: | TO-200AB |
JESD-30 代码: | O-CEDB-N2 | 最大漏电流: | 40 mA |
通态非重复峰值电流: | 4900 A | 元件数量: | 1 |
端子数量: | 2 | 最大通态电流: | 330000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 610 A | 断态重复峰值电压: | 1000 V |
重复峰值反向电压: | 1000 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子面层: | Nickel (Ni) |
端子形式: | NO LEAD | 端子位置: | END |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ST173C10CDJ0PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A | |
ST173C10CDJ1L | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM) | |
ST173C10CDJ1LP | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C10CDJ1LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A | |
ST173C10CDJ1P | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C10CDJ1PBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A | |
ST173C10CDJ2L | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 330000mA I(T), 1000V V(DRM) | |
ST173C10CDJ2LP | VISHAY |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 330000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 E | |
ST173C10CDJ2LP | INFINEON |
获取价格 |
INVERTER GRADE THYRISTORS | |
ST173C10CDJ2LPBF | INFINEON |
获取价格 |
Silicon Controlled Rectifier, 610A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-200A |