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ST1200C12K0L PDF预览

ST1200C12K0L

更新时间: 2024-02-17 01:59:48
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 88K
描述
PHASE CONTROL THYRISTORS

ST1200C12K0L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:DISK BUTTON, O-MEDB-N2
针数:2Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.12
外壳连接:ISOLATED配置:SINGLE
最大直流栅极触发电流:200 mAJESD-30 代码:O-MEDB-N2
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:METAL封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:3080 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
表面贴装:YES端子形式:NO LEAD
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

ST1200C12K0L 数据手册

 浏览型号ST1200C12K0L的Datasheet PDF文件第1页浏览型号ST1200C12K0L的Datasheet PDF文件第2页浏览型号ST1200C12K0L的Datasheet PDF文件第4页浏览型号ST1200C12K0L的Datasheet PDF文件第5页浏览型号ST1200C12K0L的Datasheet PDF文件第6页浏览型号ST1200C12K0L的Datasheet PDF文件第7页 
ST1200C..K Series  
Bulletin I25196 rev.B 01/00  
Switching  
Parameter  
ST1200C..K  
1000  
Units Conditions  
A/µs  
di/dt  
Max. non-repetitive rate of rise  
of turned-on current  
Gate drive 20V, 20, t 1µs  
r
TJ = TJ max, anode voltage 80% VDRM  
Gate current 1A, di /dt = 1A/µs  
g
t
Typical delay time  
1.9  
d
q
V
= 0.67% VDRM, TJ = 25°C  
d
µs  
ITM = 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V  
t
Typical turn-off time  
200  
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs  
p
Blocking  
Parameter  
ST1200C..K  
500  
Units Conditions  
dv/dt Maximum critical rate of rise of  
off-state voltage  
V/µs TJ = TJ max. linear to 80% rated VDRM  
IRRM  
IDRM  
Max. peak reverse and off-state  
leakage current  
100  
mA  
TJ = TJ max, rated VDRM/VRRM applied  
Triggering  
Parameter  
Maximum peak gate power  
PG(AV) Maximum average gate power  
IGM Max. peak positive gate current  
ST1200C..K  
Units Conditions  
PGM  
16  
3
TJ = TJ max, t 5ms  
p
W
A
TJ = TJ max, f = 50Hz, d% = 50  
3.0  
TJ = TJ max, t 5ms  
p
+VGM Maximum peak positive  
gate voltage  
20  
V
TJ = TJ max, t 5ms  
p
-VGM Maximum peak negative  
gate voltage  
5.0  
TYP.  
200  
MAX.  
-
TJ = - 40°C  
IGT  
DC gate current required  
to trigger  
100  
50  
200  
mA TJ = 25°C  
Max. required gate trigger/ cur-  
rent/ voltage are the lowest value  
which will trigger all units 12V  
anode-to-cathode applied  
-
-
TJ = 125°C  
TJ = - 40°C  
1.4  
1.1  
0.9  
VGT  
DC gate voltage required  
to trigger  
3.0  
-
V
TJ  
= 25°C  
T
J = 125°C  
Max. gate current/voltage not to  
trigger is the max. value which  
will not trigger any unit with rated  
VDRM anode-to-cathode applied  
IGD  
DC gate current not to trigger  
DC gate voltage not to trigger  
10  
0.25  
mA  
V
TJ = TJ max  
VGD  
3
www.irf.com  

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