Datasheet > SST4392-T1-E3

SST4392-T1-E3

更新时间： 2024-01-25 13:41:18

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	78K
描述
Transistor,

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技术参数
数据手册

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SST4392-T1-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.27	FET 技术：	JUNCTION
JESD-609代码：	e3	湿度敏感等级：	1
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

SST4392-T1-E3 数据手册

2N/PN/SST4391 Series

Vishay Siliconix

TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. Drain Current

100

200

160

r_DS@ I_D= 1 mA, V_GS= 0 V

= 25_C

I_DSS@ V_DS= 20 V, V_GS= 0 V

I_DSS

V_GS(off)= –2 V

r_DS

120

–4 V

–8 V

–2

–4

–6

–8

–10

I_D– Drain Current (mA)

100

V_GS(off)– Gate-Source Cutoff Voltage (V)

Turn-On Switching

On-Resistance vs. Temperature

200

160

t approximately independent of I_D

V_DD= 5 V, R_G= 50 W

V_GS(L)= –10 V

I_D= 1 mA

r_DSchanges X 0.7%/_C

120

d(on)

= –2 V

GS(off)

_D= 12 mA

–4 V

–8 V

d(on)

_D= 3 mA

–10

–55 –35 –15

25 45

85 105 125

–2

–4

–6

–8

– Temperature (_C)

V_GS(off)– Gate-Source Cutoff Voltage (V)

Turn-Off Switching

Capacitance vs. Gate-Source Voltage

independent of device V_GS(off)

V_DD= 5 V, V_GS(L)= –10 V

d(off)

f = 1 MHz

_DS= 0 V

V_GS(off)= –2 V

d(off)

C_iss

V_GS(off)= –8 V

C_rss

–4

–8

–12

–16

–20

I_D– Drain Current (mA)

V_GS– Gate-Source Voltage (V)

Document Number: 70241

S-04028—Rev. F, 04-Jan-01

www.vishay.com

7-4

1 2 345 6 7

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