2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
Linear Integrated Systems
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
rDS(on) ≤ 30Ω
tON ≤ 15ns
2N SERIES
PN SERIES SST SERIES
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
TO-18
TO-92
SOT-23
BOTTOM VIEW
BOTTOM VIEW
TOP VIEW
1
3
2
D
S
D
S
2
1
3
G
G
D
1
S
2
G
3
Storage Temperature (2N)
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)
Continuous Power Dissipation (PN/SST)
Maximum Currents
1800mW
350mW
Gate Current
50mA
Maximum Voltages
Gate to Drain or Source (2N/PN)
Gate to Drain or Source (SST)
-40V
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
4391
4392
4393
SYM.
CHARACTERISTIC
TYP
UNIT CONDITIONS
MIN MAX MIN MAX MIN MAX
2N/PN
SST
2N/PN
SST
-40
-35
-4
-40
-35
-2
-40
-35
-0.5
-0.5
Gate to Source
BVGSS
IG = -1µA, VDS = 0V
Breakdown Voltage
-10
-10
1
-5
-5
1
-3
-3
1
VDS = 20V, ID = 1nA
VDS = 15V, ID = 10nA
IG = 1mA, VDS = 0V
VGS = 0V, ID = 3mA
VGS = 0V, ID = 6mA
VGS = 0V, ID = 12mA
Gate to Source
Cutoff Voltage
VGS(off)
VGS(F)
-4
-2
V
Gate to Source Forward Voltage
0.7
0.25
0.3
0.4
VDS(on) Drain to Source On Voltage
0.4
0.35
0.4
150
100
2N
PN
SST
2N/SST
PN
50
50
50
25
25
25
75
100
5
5
5
30
60
Drain to Source
IDSS
mA
pA
VDS = 20V, VGS = 0V
Saturation Current2
-5
-5
-5
-100
-1000
-100
-1000
-100
-1000
IGSS
IG
Gate Leakage Current
Gate Operating Current
VGS = -20V, VDS = 0V
VDG = 15V, ID = 10mA
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261