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SST4392_SOT-23

更新时间: 2022-03-30 01:45:55
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描述
Single N-Channel JFET switch

SST4392_SOT-23 数据手册

  
SST4392  
Single N-Channel JFET switch  
Linear Systems replaces discontinued Siliconix SST4392  
FEATURES  
The SST4392 features many of the superior  
DIRECT REPLACEMENT FOR SILICONIX SST4392  
LOW ON RESISTANCE  
characteristics of JFETs which make it a good choice  
for demanding analog switching applications and for  
specialized amplifier circuits.  
rDS(on) 60Ω  
ID(off) = 5pA  
t(ON) = 15ns  
LOW GATE OPERATING CURRENT  
FAST SWITCHING  
SST4392 Benefits:  
ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)  
ƒ
ƒ
ƒ
ƒ
ƒ
Low Error Voltage  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation  
MAXIMUM CURRENT  
Gate Current (Note 1)  
MAXIMUM VOLTAGES  
Gate to Drain Voltage / Gate to Source Voltage  
High-Speed Analog Circuit Performance  
Negligible “Off-Error,” Excellent Accuracy  
Good Frequency Response, Low Glitches  
Eliminates Additional Buffering  
65°C to +200°C  
55°C to +200°C  
350mW  
SST4392 Applications:  
ƒ
ƒ
ƒ
Analog Switches  
Choppers, Sample-and-Hold  
Normally “On” Switches, Current Limiters  
IG = 50mA  
35V  
SST4392 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
BVGSS  
VGS(off)  
VGS(F)  
VDS(on)  
VDS(on)  
VDS(on)  
IDSS  
IGSS  
IG  
ID(off)  
rDS(on)  
CHARACTERISTIC  
Gate to Source Breakdown Voltage  
Gate to Source Cutoff Voltage  
Gate to Source Forward Voltage  
Drain to Source On Voltage  
Drain to Source On Voltage  
Drain to Source On Voltage  
Drain to Source Saturation Current2  
Gate Reverse Current  
MIN  
35  
2  
‐‐  
‐‐  
‐‐  
‐‐  
25  
‐‐  
‐‐  
‐‐  
TYP.  
‐‐  
‐‐  
0.7  
0.25  
0.3  
0.35  
‐‐  
5  
5  
5
‐‐  
MAX  
‐‐  
5  
1
‐‐  
0.4  
‐‐  
‐‐  
100  
‐‐  
100  
60  
UNITS  
V
CONDITIONS  
IG = 1µA, VDS = 0V  
VDS = 15V, ID = 10nA  
IG = 1mA, VDS = 0V  
VGS = 0V, ID = 3mA  
VGS = 0V, ID = 6mA  
VGS = 0V, ID = 12mA  
VDS = 20V, VGS = 0V  
VGS = 20V, VDS = 0V  
VDG = 15V, ID = 10mA  
VDS = 10V, VGS = 10V  
VGS = 0V, ID = 1mA  
mA  
pA  
Ω
Gate Operating Current  
Drain Cutoff Current  
Drain to Source On Resistance  
‐‐  
SST4392 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
CHARACTERISTIC  
TYP  
MIN  
MAX  
UNITS  
mS  
CONDITIONS  
gfs  
Forward Transconductance  
6
‐‐  
‐‐  
VDS = 20V, ID = 1mA, f = 1kHz  
Click To Buy  
gos  
Output Conductance  
Drain to Source On Resistance  
Input Capacitance  
25  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
‐‐  
60  
‐‐  
µS  
VDS = 20V, ID = 1mA, f = 1kHz  
VGS = 0V, ID = 0A, f = 1kHz  
rds(on)  
Ciss  
‐‐  
Ω
13  
3.6  
3.5  
3.1  
3
VDS = 20V, VGS = 0V, f = 1MHz  
VDS = 0V, VGS = 5V, f = 1MHz  
VDS = 0V, VGS = 7V, f = 1MHz  
VDS = 0V, VGS = 12V, f = 1MHz  
VDS = 10V, ID = 10mA, f = 1kHz  
Crss  
‐‐  
pF  
Reverse Transfer Capacitance  
Crss  
‐‐  
Crss  
‐‐  
en  
Equivalent Input Noise Voltage  
‐‐  
nV/Hz  
SST4392 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)  
SYMBOL  
td(on)  
tr  
CHARACTERISTIC  
TYP  
2
MIN  
‐‐  
MAX  
‐‐  
UNITS  
CONDITIONS  
Turn On Time  
2
‐‐  
‐‐  
ns  
VDD = 10V, VGS(H) = 0V  
td(off)  
tf  
6
‐‐  
‐‐  
Turn Off Time  
13  
‐‐  
‐‐  
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired  
2. Pulse test: PW 300µs, Duty Cycle 3%  
SST4392 SWITCHING CIRCUIT PARAMETERS  
SWITCHING CIRCUIT  
VGS(L)  
RL  
7V  
1600Ω  
6mA  
SOT-23 (Top View)  
Micross Components Europe  
ID(on)  
Available Packages:  
Tel: +44 1603 788967  
Email: chipcomponents@micross.com  
Web: http://www.micross.com/distribution  
SST4392 in SOT-23  
SST4392 in bare die.  
Contact Micross for full package and die dimensions  
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or  
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.  

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