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SST39VF1601-70-4C-B3KE

更新时间： 2024-11-22 22:09:15
品牌 Logo 应用领域
SST 闪存内存集成电路PC
页数 文件大小 规格书
32页 498K
描述
16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus

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SST39VF1601-70-4C-B3KE 数据手册

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16 Mbit / 32 Mbit / 64 Mbit (x16) Multi-Purpose Flash Plus  
SST39VF1601 / SST39VF3201 / SST39VF6401  
SST39VF1602 / SST39VF3202 / SST39VF6402  
SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories  
Preliminary Specifications  
FEATURES:  
•
Organized as 1M x16: SST39VF1601/1602  
2M x16: SST39VF3201/3202  
•
•
Security-ID Feature  
– SST: 128 bits; User: 128 bits  
Fast Read Access Time:  
4M x16: SST39VF6401/6402  
•
•
Single Voltage Read and Write Operations  
– 2.7-3.6V  
– 70 ns  
– 90 ns  
Superior Reliability  
•
•
Latched Address and Data  
– Endurance: 100,000 Cycles (Typical)  
– Greater than 100 years Data Retention  
Fast Erase and Word-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Block-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 40 ms (typical)  
– Word-Program Time: 7 µs (typical)  
•
•
Low Power Consumption (typical values at 5 MHz)  
– Active Current: 9 mA (typical)  
– Standby Current: 3 µA (typical)  
– Auto Low Power Mode: 3 µA (typical)  
•
•
Automatic Write Timing  
– Internal VPP Generation  
End-of-Write Detection  
Hardware Block-Protection/WP# Input Pin  
– Top Block-Protection (top 32 KWord)  
for SST39VF1602/3202/6402  
– Bottom Block-Protection (bottom 32 KWord)  
for SST39VF1601/3201/6401  
– Toggle Bits  
– Data# Polling  
•
•
CMOS I/O Compatibility  
JEDEC Standard  
•
•
Sector-Erase Capability  
– Uniform 2 KWord sectors  
Block-Erase Capability  
– Flash EEPROM Pinouts and command sets  
Packages Available  
•
– Uniform 32 KWord blocks  
Chip-Erase Capability  
– 48-lead TSOP (12mm x 20mm)  
– 48-ball TFBGA (6mm x 8mm) for 16M and 32M  
– 48-ball TFBGA (8mm x 10mm) for 64M  
•
•
•
Erase-Suspend/Erase-Resume Capabilities  
Hardware Reset Pin (RST#)  
PRODUCT DESCRIPTION  
The SST39VF160x/320x/640x devices are 1M x16, 2M  
x16, and 4M x16 respectively, CMOS Multi-Purpose  
Flash Plus (MPF+) manufactured with SST’s proprietary,  
high performance CMOS SuperFlash technology. The  
split-gate cell design and thick-oxide tunneling injector  
attain better reliability and manufacturability compared  
with alternate approaches. The SST39VF160x/320x/640x  
write (Program or Erase) with a 2.7-3.6V power supply.  
These devices conform to JEDEC standard pinouts for  
x16 memories.  
The SST39VF160x/320x/640x devices are suited for appli-  
cations that require convenient and economical updating of  
program, configuration, or data memory. For all system  
applications, they significantly improve performance and  
reliability, while lowering power consumption. They inher-  
ently use less energy during Erase and Program than alter-  
native flash technologies. The total energy consumed is a  
function of the applied voltage, current, and time of applica-  
tion. Since for any given voltage range, the SuperFlash  
technology uses less current to program and has a shorter  
erase time, the total energy consumed during any Erase or  
Program operation is less than alternative flash technolo-  
gies. These devices also improve flexibility while lowering  
the cost for program, data, and configuration storage appli-  
cations.  
Featuring high performance Word-Program, the  
SST39VF160x/320x/640x devices provide a typical Word-  
Program time of 7 µsec. These devices use Toggle Bit or  
Data# Polling to indicate the completion of Program opera-  
tion. To protect against inadvertent write, they have on-chip  
hardware and Software Data Protection schemes.  
Designed, manufactured, and tested for a wide spectrum of  
applications, these devices are offered with a guaranteed  
typical endurance of 100,000 cycles. Data retention is rated  
at greater than 100 years.  
The SuperFlash technology provides fixed Erase and Pro-  
gram times, independent of the number of Erase/Program  
cycles that have occurred. Therefore the system software  
or hardware does not have to be modified or de-rated as is  
necessary with alternative flash technologies, whose  
Erase and Program times increase with accumulated  
Erase/Program cycles.  
©2003 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
MPF is a trademark of Silicon Storage Technology, Inc.  
S71223-03-000  
1
11/03  
These specifications are subject to change without notice.  
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