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SST39VF020-70-4C-WHE-T PDF预览

SST39VF020-70-4C-WHE-T

更新时间: 2024-12-01 14:36:03
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
28页 279K
描述
IC,EEPROM,NOR FLASH,256KX8,CMOS,TSSOP,32PIN,PLASTIC

SST39VF020-70-4C-WHE-T 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:TSOP1, TSSOP32,.56,20
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51Factory Lead Time:11 weeks
风险等级:5.66Is Samacsys:N
最长访问时间:70 ns命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:12.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1部门数/规模:64
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:4K
最大待机电流:0.000015 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

SST39VF020-70-4C-WHE-T 数据手册

 浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第2页浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第3页浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第4页浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第5页浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第6页浏览型号SST39VF020-70-4C-WHE-T的Datasheet PDF文件第7页 
1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash  
SST39LF010 / SST39LF020 / SST39LF040  
SST39VF010 / SST39VF020 / SST39VF040  
Data Sheet  
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,  
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash  
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide tunneling injector attain bet-  
ter reliability and manufacturability compared with alternate approaches. The  
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power  
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.  
The devices conform to JEDEC standard pinouts for x8 memories.  
Features  
• Organized as 128K x8 / 256K x8 / 512K x8  
• Fast Erase and Byte-Program:  
– Sector-Erase Time: 18 ms (typical)  
– Chip-Erase Time: 70 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Chip Rewrite Time:  
2 seconds (typical) for SST39LF/VF010  
4 seconds (typical) for SST39LF/VF020  
8 seconds (typical) for SST39LF/VF040  
• Single Voltage Read and Write Operations  
– 3.0-3.6V for SST39LF010/020/040  
– 2.7-3.6V for SST39VF010/020/040  
• Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
• Automatic Write Timing  
• Low Power Consumption  
(typical values at 14 MHz)  
– Internal VPP Generation  
– Active Current: 5 mA (typical)  
– Standby Current: 1 µA (typical)  
• End-of-Write Detection  
Toggle Bit  
– Data# Polling  
• Sector-Erase Capability  
– Uniform 4 KByte sectors  
• CMOS I/O Compatibility  
• Fast Read Access Time:  
• JEDEC Standard  
– 55 ns for SST39LF010/020/040  
– 70 ns for SST39VF010/020/040  
– Flash EEPROM Pinouts and command sets  
• Packages Available  
• Latched Address and Data  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm)  
• All devices are RoHS compliant  
www.microchip.com  
©2012 Silicon Storage Technology, Inc.  
DS25023B  
06/13  

SST39VF020-70-4C-WHE-T 替代型号

型号 品牌 替代类型 描述 数据表
SST39VF020-70-4C-WHE MICROCHIP

完全替代

256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32, 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32

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