Datasheet > SST39LF020-45-4C-B3KE

SST39LF020-45-4C-B3KE

更新时间： 2024-12-01 05:16:43

品牌	Logo	应用领域
SST		闪存内存集成电路
页数	文件大小	规格书
25页	456K
描述
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SST39LF020-45-4C-B3KE 数据手册

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第2页

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第3页

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第4页

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第5页

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第6页

浏览型号SST39LF020-45-4C-B3KE的Datasheet PDF文件第7页

512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040

SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040

SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories

Data Sheet

FEATURES:

•

Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8

Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF512/010/020/040

– 2.7-3.6V for SST39VF512/010/020/040

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption

(typical values at 14 MHz)

– Active Current: 5 mA (typical)

– Standby Current: 1 µA (typical)

Sector-Erase Capability

– Uniform 4 KByte sectors

Fast Read Access Time:

•

Fast Erase and Byte-Program:

– Sector-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Byte-Program Time: 14 µs (typical)

– Chip Rewrite Time:

•

1 second (typical) for SST39LF/VF512

2 seconds (typical) for SST39LF/VF010

4 seconds (typical) for SST39LF/VF020

8 seconds (typical) for SST39LF/VF040

•

Automatic Write Timing

– Internal V_PPGeneration

End-of-Write Detection

– Toggle Bit

– Data# Polling

CMOS I/O Compatibility

JEDEC Standard

– Flash EEPROM Pinouts and command sets

Packages Available

•

– 45 ns for SST39LF512/010/020/040

– 55 ns for SST39LF020/040

– 70 and 90 ns for SST39VF512/010/020/040

•

Latched Address and Data

– 32-lead PLCC

– 32-lead TSOP (8mm x 14mm)

– 48-ball TFBGA (6mm x 8mm)

– 34-ball WFBGA (4mm x 6mm) for 1M and 2M

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8

CMOS Multi-Purpose Flash (MPF) manufactured with

SST’s proprietary, high performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide tun-

neling injector attain better reliability and manufacturability

compared with alternate approaches. The SST39LF512/

010/020/040 devices write (Program or Erase) with a 3.0-

3.6V power supply. The SST39VF512/010/020/040

devices write with a 2.7-3.6V power supply. The devices

conform to JEDEC standard pinouts for x8 memories.

significantly improves performance and reliability, while low-

ering power consumption. They inherently use less energy

during Erase and Program than alternative flash technolo-

gies. The total energy consumed is a function of the

applied voltage, current, and time of application. Since for

any given voltage range, the SuperFlash technology uses

less current to program and has a shorter erase time, the

total energy consumed during any Erase or Program oper-

ation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

Featuring high performance Byte-Program, the

SST39LF512/010/020/040 and SST39VF512/010/020/

040 devices provide a maximum Byte-Program time of 20

µsec. These devices use Toggle Bit or Data# Polling to indi-

cate the completion of Program operation. To protect

against inadvertent write, they have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, they

are offered with a guaranteed typical endurance of 10,000

cycles. Data retention is rated at greater than 100 years.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF512/

010/020/040 and SST39VF512/010/020/040 devices are

offered in 32-lead PLCC and 32-lead TSOP packages. The

SST39LF/VF010 and SST39LF/VF020 are also offered in

a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for

pin assignments.

The SST39LF512/010/020/040 and SST39VF512/010/

020/040 devices are suited for applications that require

convenient and economical updating of program, configu-

ration, or data memory. For all system applications, they

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

S71150-09-000

1/06

These specifications are subject to change without notice.

12 3 4 5 6 7...25

中文翻译

下载PDF

SST39LF020-45-4C-B3KE 替代型号

型号	品牌	替代类型	描述	数据表
SST39VF020-70-4C-B3KE	MICROCHIP	功能相似	256K X 8 FLASH 2.7V PROM, 70 ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, ROHS COMPLIANT, MO-210AB
SST39VF020-70-4C-B3KE	SST	功能相似	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-B3K	SST	功能相似	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

与SST39LF020-45-4C-B3KE相关器件

型号	品牌	获取价格	描述	数据表
SST39LF020-45-4C-B3KE-T	MICROCHIP	获取价格	IC,EEPROM,NOR FLASH,256KX8,CMOS,BGA,48PIN,PLASTIC
SST39LF020-45-4C-B3ME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MKE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MM	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MME	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MME	MICROCHIP	获取价格	256K X 8 FLASH 3V PROM, 45 ns, PBGA34, 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-225, WF
SST39LF020-45-4C-MME-T	MICROCHIP	获取价格	SST39LF020-45-4C-MME-T
SST39LF020-45-4C-NH	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-NHE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash

与SST39LF020-45-4C-B3KE相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

SST39LF020-45-4C-B3KE

SST39LF020-45-4C-B3KE 数据手册

SST39LF020-45-4C-B3KE 替代型号

与SST39LF020-45-4C-B3KE相关器件

与SST39LF020-45-4C-B3KE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SST39LF020-45-4C-B3KE

SST39LF020-45-4C-B3KE 数据手册

SST39LF020-45-4C-B3KE 替代型号

与SST39LF020-45-4C-B3KE相关器件

与SST39LF020-45-4C-B3KE相关文章

您还可以找

您在本页遇到什么问题？