1 Mbit (128K x8) Page-Write EEPROM
SST29EE010 / SST29LE010 / SST29VE010
SST29EE / LE / VE0101Mb Page-Write flash memories
Data Sheet
FEATURES:
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Single Voltage Read and Write Operations
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Latched Address and Data
– 4.5-5.5V for SST29EE010
– 3.0-3.6V for SST29LE010
– 2.7-3.6V for SST29VE010
Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
Low Power Consumption
– Active Current: 20 mA (typical) for 5V and 10 mA
(typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
Fast Page-Write Operation
Automatic Write Timing
– Internal VPP Generation
End of Write Detection
– Toggle Bit
– Data# Polling
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Hardware and Software Data Protection
Product Identification can be accessed via
Software Operation
TTL I/O Compatibility
JEDEC Standard
– Flash EEPROM Pinouts and command sets
Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
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– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
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Fast Read Access Time
– 4.5-5.5V operation: 70 and 90 ns
– 3.0-3.6V operation: 150 and 200 ns
– 2.7-3.6V operation: 200 ns
PRODUCT DESCRIPTION
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write
EEPROMs manufactured with SST’s proprietary, high per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE010 write with a single
power supply. Internal Erase/Program is transparent to the
user. The SST29EE/LE/VE010 conform to JEDEC stan-
dard pinouts for byte-wide memories.
The SST29EE/LE/VE010 are suited for applications
that require convenient and economical updating of
program, configuration, or data memory. For all sys-
tem applications, the SST29EE/LE/VE010 significantly
improve performance and reliability, while lowering
power consumption. The
SST29EE/LE/VE010
improve flexibility while lowering the cost for program,
data, and configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-
lead TSOP packages. A 600-mil, 32-pin PDIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Featuring high performance Page-Write, the SST29EE/LE/
VE010 provide a typical Byte-Write time of 39 µsec. The
entire memory, i.e., 128 Kbyte, can be written page-by-
page in as little as 5 seconds, when using interface features
such as Toggle Bit or Data# Polling to indicate the comple-
tion of a Write cycle. To protect against inadvertent write,
the SST29EE/LE/VE010 have on-chip hardware and Soft-
ware Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, the
SST29EE/LE/VE010 are offered with a guaranteed Page-
Write endurance of 10,000 cycles. Data retention is rated at
greater than 100 years.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE/LE/VE010 does not require
separate Erase and Program operations. The internally
timed Write cycle executes both erase and program trans-
parently to the user. The SST29EE/LE/VE010 have indus-
try standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE010 are compatible with industry standard EEPROM
pinouts and functionality.
©2002 Silicon Storage Technology, Inc.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
S71061-07-000 2/02
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