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SST29LE010-150-4C-NHE PDF预览

SST29LE010-150-4C-NHE

更新时间: 2024-11-25 15:52:55
品牌 Logo 应用领域
芯科 - SILICON /
页数 文件大小 规格书
26页 770K
描述
Flash, 128KX8, 150ns, PQCC32, LEAD FREE, PLASTIC, MS-016AE, LCC-32

SST29LE010-150-4C-NHE 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ,
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82Is Samacsys:N
最长访问时间:150 nsJESD-30 代码:R-PQCC-J32
JESD-609代码:e3长度:13.97 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3 V
认证状态:Not Qualified座面最大高度:3.556 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:10宽度:11.43 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

SST29LE010-150-4C-NHE 数据手册

 浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第2页浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第3页浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第4页浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第5页浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第6页浏览型号SST29LE010-150-4C-NHE的Datasheet PDF文件第7页 
1 Mbit (128K x8) Page-Write EEPROM  
SST29EE010 / SST29LE010 / SST29VE010  
SST29EE / LE / VE0101Mb Page-Write flash memories  
Data Sheet  
FEATURES:  
Single Voltage Read and Write Operations  
Latched Address and Data  
– 4.5-5.5V for SST29EE010  
– 3.0-3.6V for SST29LE010  
– 2.7-3.6V for SST29VE010  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption  
– Active Current: 20 mA (typical) for 5V and 10 mA  
(typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
Fast Page-Write Operation  
Automatic Write Timing  
– Internal VPP Generation  
End of Write Detection  
Toggle Bit  
– Data# Polling  
Hardware and Software Data Protection  
Product Identification can be accessed via  
Software Operation  
TTL I/O Compatibility  
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
– 32-lead PLCC  
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)  
– 32-pin PDIP  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs (typical)  
Fast Read Access Time  
– 4.5-5.5V operation: 70 and 90 ns  
– 3.0-3.6V operation: 150 and 200 ns  
– 2.7-3.6V operation: 200 ns  
PRODUCT DESCRIPTION  
The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write  
EEPROMs manufactured with SST’s proprietary, high per-  
formance CMOS SuperFlash technology. The split-gate  
cell design and thick oxide tunneling injector attain better  
reliability and manufacturability compared with alternate  
approaches. The SST29EE/LE/VE010 write with a single  
power supply. Internal Erase/Program is transparent to the  
user. The SST29EE/LE/VE010 conform to JEDEC stan-  
dard pinouts for byte-wide memories.  
The SST29EE/LE/VE010 are suited for applications  
that require convenient and economical updating of  
program, configuration, or data memory. For all sys-  
tem applications, the SST29EE/LE/VE010 significantly  
improve performance and reliability, while lowering  
power consumption. The  
SST29EE/LE/VE010  
improve flexibility while lowering the cost for program,  
data, and configuration storage applications.  
To meet high density, surface mount requirements, the  
SST29EE/LE/VE010 are offered in 32-lead PLCC and 32-  
lead TSOP packages. A 600-mil, 32-pin PDIP package is  
also available. See Figures 1, 2, and 3 for pinouts.  
Featuring high performance Page-Write, the SST29EE/LE/  
VE010 provide a typical Byte-Write time of 39 µsec. The  
entire memory, i.e., 128 Kbyte, can be written page-by-  
page in as little as 5 seconds, when using interface features  
such as Toggle Bit or Data# Polling to indicate the comple-  
tion of a Write cycle. To protect against inadvertent write,  
the SST29EE/LE/VE010 have on-chip hardware and Soft-  
ware Data Protection schemes. Designed, manufactured,  
and tested for a wide spectrum of applications, the  
SST29EE/LE/VE010 are offered with a guaranteed Page-  
Write endurance of 10,000 cycles. Data retention is rated at  
greater than 100 years.  
Device Operation  
The SST Page-Write EEPROM offers in-circuit electrical  
write capability. The SST29EE/LE/VE010 does not require  
separate Erase and Program operations. The internally  
timed Write cycle executes both erase and program trans-  
parently to the user. The SST29EE/LE/VE010 have indus-  
try standard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE/LE/  
VE010 are compatible with industry standard EEPROM  
pinouts and functionality.  
©2002 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.  
Small-Sector Flash and SSF are trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71061-07-000 2/02  
1
304  

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