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SST29EE010-120-4CPH PDF预览

SST29EE010-120-4CPH

更新时间: 2024-11-07 23:34:31
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IC

SST29EE010-120-4CPH 数据手册

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1 Megabit (128K x8) Page-Mode EEPROM  
SST29EE010 / SST29LE010 / SST29VE010  
Data Sheet  
FEATURES:  
Single Voltage Read and Write Operations  
FastReadAccessTime  
– 5.0V-only for the SST29EE010  
– 3.0-3.6V for the SST29LE010  
– 2.7-3.6V for the SST29VE010  
– 5.0V-only operation: 90 and 120 ns  
– 3.0-3.6V operation: 150 and 200 ns  
– 2.7-3.6V operation: 200 and 250 ns  
1
Superior Reliability  
Latched Address and Data  
2
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Automatic Write Timing  
– InternalVPPGeneration  
End of Write Detection  
Low Power Consumption  
3
– Active Current: 20 mA (typical) for 5V and  
10 mA (typical) for 3.0/2.7V  
– Standby Current: 10 µA (typical)  
– Toggle Bit  
– Data# Polling  
4
Hardware and Software Data Protection  
FastPage-WriteOperation  
TTL I/O Compatibility  
– 128 Bytes per Page, 1024 Pages  
– Page-Write Cycle: 5 ms (typical)  
– Complete Memory Rewrite: 5 sec (typical)  
– Effective Byte-Write Cycle Time: 39 µs  
(typical)  
5
JEDEC Standard  
– Flash EEPROM Pinouts and command sets  
Packages Available  
6
– 32 Pin PDIP  
– 32-Pin PLCC  
– 32-Pin TSOP (8mm x 14mm, 8mm x 20mm)  
7
PRODUCTDESCRIPTION  
8
system applications, the SST29EE010/29LE010/  
29VE010significantlyimproveperformanceandreliabil-  
ity, while lowering power consumption. The  
SST29EE010/29LE010/29VE010 improve flexibility  
whileloweringthecostforprogram, data, andconfigura-  
tion storage applications.  
The SST29EE010/29LE010/29VE010 are 128K x8  
CMOSPage-WriteEEPROMsmanufacturedwithSST’s  
proprietary, high performance CMOS SuperFlash tech-  
nology. The split-gate cell design and thick oxide tunnel-  
ing injector attain better reliability and manufacturability  
compared with alternate approaches. The  
SST29EE010/29LE010/29VE010 write with a single  
power supply. Internal Erase/Program is transparent to  
the user. The SST29EE010/29LE010/29VE010  
conform to JEDEC standard pinouts for byte-wide  
memories.  
9
10  
11  
12  
13  
14  
15  
16  
To meet high density, surface mount requirements, the  
SST29EE010/29LE010/29VE010 are offered in 32-pin  
TSOP and 32-lead PLCC packages. A 600-mil, 32-pin  
PDIP package is also available. See Figures 1 and 2 for  
pinouts.  
Featuring high performance Page-Write, the  
SST29EE010/29LE010/29VE010provideatypicalByte-  
Write time of 39 µsec. The entire memory, i.e., 128  
KBytes, can be written page-by-page in as little as 5  
seconds, when using interface features such as Toggle  
Bit or Data# Polling to indicate the completion of a Write  
cycle. To protect against inadvertent write, the  
SST29EE010/29LE010/29VE010 have on-chip hard-  
wareandSoftwareDataProtectionschemes.Designed,  
manufactured,andtestedforawidespectrumofapplica-  
tions, the SST29EE010/29LE010/29VE010 are offered  
with a guaranteed Page-Write endurance of 104 cycles.  
Data retention is rated at greater than 100 years.  
DeviceOperation  
TheSSTPage-ModeEEPROMoffersin-circuitelectrical  
write capability. The SST29EE010/29LE010/29VE010  
does not require separate Erase and Program opera-  
tions. The internally timed write cycle executes both  
erase and program transparently to the user. The  
SST29EE010/29LE010/29VE010 have industry stan-  
dard optional Software Data Protection, which SST  
recommends always to be enabled. The SST29EE010/  
29LE010/29VE010 are compatible with industry stan-  
dard EEPROM pinouts and functionality.  
Read  
The SST29EE010/29LE010/29VE010 are suited for ap-  
plicationsthatrequireconvenientandeconomicalupdat-  
ing of program, configuration, or data memory. For all  
The Read operations of the SST29EE010/29LE010/  
29VE010 are controlled by CE# and OE#, both have to  
be low for the system to obtain data from the outputs.  
CE# is used for device selection. When CE# is high, the  
©2000 SiliconStorageTechnology,Inc.TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.  
304-4 11/00 S71061  
SSFisatrademarkofSiliconStorageTechnology,Inc.  
Thesespecificationsaresubjecttochangewithoutnotice.  

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