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SSRF30N20-400 PDF预览

SSRF30N20-400

更新时间: 2024-10-02 09:04:39
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描述
N-Ch Enhancement Mode Power MOSFET

SSRF30N20-400 数据手册

 浏览型号SSRF30N20-400的Datasheet PDF文件第2页 
SSRF30N20-400  
23A, 200V, RDS(ON) 400mΩ  
N-Ch Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
DESCRIPTION  
ITO-220  
These miniature surface mount MOSFETs utilize a high cell density trench  
process to provide Low RDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC converters and power management  
in portable and battery-powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
B
N
D
E
M
J
A
C
FEATURES  
Low RDS(on) provides higher efficiency and extends battery life.  
Low thermal impedance copper leadframe ITO-220 saves board  
space.  
H
L
Fast switching speed.  
High performance trench technology.  
K
L
G
F
Dimensions in millimeters  
PRODUCT SUMMARY  
SSRF30N20-400  
ID(A)  
23 1  
VDS(V)  
200  
RDS(on) (m  
400@VGS= 10V  
450@VGS= 4.5V  
Millimeter  
REF.  
Millimeter  
REF.  
Min.  
15.00  
9.50  
Max.  
15.60  
10.50  
Min.  
Max.  
3.80  
1.50  
0.90  
2.74  
2.90  
3.4  
A
B
C
D
E
F
H
J
3.00  
0.90  
0.50  
2.34  
2.50  
3.1  
13.00 Min  
K
L
M
N
4.30  
2.50  
2.40  
0.30  
4.70  
3.10  
2.80  
0.70  
G
  
Drain  
  
Gate  
  
Source  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
200  
UNIT  
Drain-Source Voltage  
VDS  
VGS  
V
V
Gate-Source Voltage  
±20  
Continuous Drain Current 1  
Pulsed Drain Current 2  
ID @TC=25℃  
IDM  
23  
A
240  
A
Continuous Source Current (Diode Conduction) 1  
Total Power Dissipation 1  
IS  
90  
A
PD @TC=25℃  
TJ, TSTG  
300  
W
°C  
Operating Junction and Storage Temperature Range  
-55 ~ 175  
THERMAL RESISTANCE RATINGS  
Maximum Thermal Resistance Junction-Ambient 1  
RθJA  
RθJC  
62.5  
0.5  
°C / W  
°C / W  
Maximum Thermal Resistance Junction-Case  
Notes  
1
2
Package Limited.  
Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
01-Dec-2010 Rev.A  
Page 1 of 2  

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