SSRF30N20-400
23A, 200V, RDS(ON) 400mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
ITO-220
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
B
N
D
E
M
J
A
C
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe ITO-220 saves board
space.
H
L
Fast switching speed.
High performance trench technology.
K
L
G
F
Dimensions in millimeters
PRODUCT SUMMARY
SSRF30N20-400
ID(A)
23 1
VDS(V)
200
RDS(on) (m
400@VGS= 10V
450@VGS= 4.5V
Millimeter
REF.
Millimeter
REF.
Min.
15.00
9.50
Max.
15.60
10.50
Min.
Max.
3.80
1.50
0.90
2.74
2.90
3.4
A
B
C
D
E
F
H
J
3.00
0.90
0.50
2.34
2.50
3.1
13.00 Min
K
L
M
N
4.30
2.50
2.40
0.30
4.70
3.10
2.80
0.70
G
Drain
Gate
Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
200
UNIT
Drain-Source Voltage
VDS
VGS
V
V
Gate-Source Voltage
±20
Continuous Drain Current 1
Pulsed Drain Current 2
ID @TC=25℃
IDM
23
A
240
A
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
IS
90
A
PD @TC=25℃
TJ, TSTG
300
W
°C
Operating Junction and Storage Temperature Range
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1
RθJA
RθJC
62.5
0.5
°C / W
°C / W
Maximum Thermal Resistance Junction-Case
Notes:
1
2
Package Limited.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Dec-2010 Rev.A
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