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SSRF50P04-16 PDF预览

SSRF50P04-16

更新时间: 2024-10-02 09:04:39
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
2页 139K
描述
P-Ch Enhancement Mode Power MOSFET

SSRF50P04-16 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

SSRF50P04-16 数据手册

 浏览型号SSRF50P04-16的Datasheet PDF文件第2页 
SSRF50P04-16  
50A, -40V, RDS(ON) 16mΩ  
P-Ch Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
DESCRIPTION  
ITO-220  
These miniature surface mount MOSFETs utilize a high cell density trench  
process to provide Low RDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC converters and power management  
in portable and battery-powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
B
N
D
E
M
J
A
C
FEATURES  
Low RDS(on) provides higher efficiency and extends battery life.  
Low thermal impedance copper leadframe ITO-220 saves board  
space.  
H
L
Fast switching speed.  
High performance trench technology.  
K
L
G
F
Dimensions in millimeters  
PRODUCT SUMMARY  
SSRF50P04-16  
ID(A)  
50  
38  
VDS(V)  
-40  
RDS(on) (m  
16@VGS= -10V  
28@VGS= -4.5V  
Millimeter  
REF.  
Millimeter  
REF.  
Min.  
15.00  
9.50  
Max.  
15.60  
10.50  
Min.  
Max.  
3.80  
1.50  
0.90  
2.74  
2.90  
3.4  
A
B
C
D
E
F
H
J
3.00  
0.90  
0.50  
2.34  
2.50  
3.1  
13.00 Min  
K
L
M
N
4.30  
2.50  
2.40  
0.30  
4.70  
3.10  
2.80  
0.70  
G
  
Drain  
  
Gate  
  
Source  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)  
PARAMETER  
SYMBOL  
RATINGS  
-40  
UNIT  
Drain-Source Voltage  
VDS  
VGS  
V
V
Gate-Source Voltage  
±20  
Continuous Drain Current 1  
Pulsed Drain Current 2  
Continuous Source Current (Diode Conduction) 1  
Total Power Dissipation 1  
ID @TC=25℃  
IDM  
50  
A
±100  
-30  
A
IS  
A
PD @TC=25℃  
TJ, TSTG  
60  
W
°C  
Operating Junction and Storage Temperature Range  
-55 ~ 175  
THERMAL RESISTANCE RATINGS  
Maximum Thermal Resistance Junction-Ambient 1  
RθJA  
RθJC  
50  
°C / W  
°C / W  
Maximum Thermal Resistance Junction-Case  
3.0  
Notes  
1
2
Package Limited.  
Pulse width limited by maximum junction temperature.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
30-Nov-2010 Rev.A  
Page 1 of 2  

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