SSRF4N60
4A , 600 V , RDS(ON) 2.4 Ω
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
ITO-220
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance. This device is well suited for high
efficiency switched mode power suppliers, active power factor
correction, electronic lamp ballasts based half bridge topology.
B
N
D
E
M
A
C
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
J
H
L
K
L
G
F
2
Drain
Millimeter
Millimeter
Min. Max.
REF.
REF.
1
Gate
Min.
Max.
15.70
10.50
14.00
4.70
3.2
A
B
C
D
E
F
14.60
9.50
12.60
4.30
2.30
2.30
0.30
H
J
K
L
M
N
2.70
0.90
0.50
2.34
2.40
φ 3.0
3.80
1.50
0.90
2.74
3.00
φ 3.4
3
Source
2.80
0.70
G
ABSOLUTE MAXIMUM RATINGS(TC=25°C unless otherwise specified
)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
600
V
V
±30
Continuous Drain Current
4.0
A
Pulsed Drain Current
IDM
16
33
A
Power Dissipation2
W
PD
Derating factor above 25°C
0.26
W / °C
mJ
Single Pulsed Avalanche Energy1
Repetitive Avalanche Energy2
Operating Junction and Storage Temperature Range
EAS
EAR
330
7.3
mJ
TJ, Tstg
150,-55~150
°C
Thermal Resistance Rating
Maximum Junction to Ambient
RθJA
RθJC
62.5
3.79
°C / W
Maximum Junction to Case
Notes:
1. L=30mH, IAS=4.4A, VDD=85V, RG=25Ω, Starting TJ=25°C
2. Repetitive Rating: Pulse width limited by maximum junction temperature
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
5-Jul-2011 Rev. A
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