5秒后页面跳转
SSRF4N60 PDF预览

SSRF4N60

更新时间: 2024-10-02 09:04:39
品牌 Logo 应用领域
SECOS /
页数 文件大小 规格书
4页 448K
描述
4A , 600 V , RDS(ON) 2.4  N-Channel Enhancement Mode Power MOSFET

SSRF4N60 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

SSRF4N60 数据手册

 浏览型号SSRF4N60的Datasheet PDF文件第2页浏览型号SSRF4N60的Datasheet PDF文件第3页浏览型号SSRF4N60的Datasheet PDF文件第4页 
SSRF4N60  
4A , 600 V , RDS(ON) 2.4 Ω  
N-Channel Enhancement Mode Power MOSFET  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen and lead-free  
DESCRIPTION  
ITO-220  
The N-Channel MOSFET is used an advanced termination  
scheme to provide enhanced voltage-blocking capability without  
degrading performance over time. This advanced technology has  
been especially tailored to minimize on-state resistance, provide  
superior switching performance. This device is well suited for high  
efficiency switched mode power suppliers, active power factor  
correction, electronic lamp ballasts based half bridge topology.  
B
N
D
E
M
A
C
FEATURES  
Robust high voltage termination  
Avalanche energy specified  
Diode is characterized for use in bridge circuits  
Source to Drain diode recovery time comparable to a  
discrete fast recovery diode.  
J
H
L
K
L
G
F
2
Drain  
Millimeter  
Millimeter  
Min. Max.  
REF.  
REF.  
1
Gate  
Min.  
Max.  
15.70  
10.50  
14.00  
4.70  
3.2  
A
B
C
D
E
F
14.60  
9.50  
12.60  
4.30  
2.30  
2.30  
0.30  
H
J
K
L
M
N
2.70  
0.90  
0.50  
2.34  
2.40  
φ 3.0  
3.80  
1.50  
0.90  
2.74  
3.00  
φ 3.4  
3
Source  
2.80  
0.70  
G
ABSOLUTE MAXIMUM RATINGS(TC=25°C unless otherwise specified  
)
Parameter  
Symbol  
Ratings  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
600  
V
V
±30  
Continuous Drain Current  
4.0  
A
Pulsed Drain Current  
IDM  
16  
33  
A
Power Dissipation2  
W
PD  
Derating factor above 25°C  
0.26  
W / °C  
mJ  
Single Pulsed Avalanche Energy1  
Repetitive Avalanche Energy2  
Operating Junction and Storage Temperature Range  
EAS  
EAR  
330  
7.3  
mJ  
TJ, Tstg  
150,-55~150  
°C  
Thermal Resistance Rating  
Maximum Junction to Ambient  
RθJA  
RθJC  
62.5  
3.79  
°C / W  
Maximum Junction to Case  
Notes:  
1. L=30mH, IAS=4.4A, VDD=85V, RG=25, Starting TJ=25°C  
2. Repetitive Rating: Pulse width limited by maximum junction temperature  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
5-Jul-2011 Rev. A  
Page 1 of 4  

与SSRF4N60相关器件

型号 品牌 获取价格 描述 数据表
SSRF50P04-16 SECOS

获取价格

P-Ch Enhancement Mode Power MOSFET
SSRF60N10 SECOS

获取价格

N-Ch Enhancement Mode Power MOSFET
SSRF90N06 SECOS

获取价格

N-Ch Enhancement Mode Power MOSFET
SSRF90N06-10 SECOS

获取价格

N-Ch Enhancement Mode Power MOSFET
SSRFREQBR KYOCERA AVX

获取价格

CERAMIC RESONATOR, 16 MHz - 60 MHz
SSR-FREQCR KYOCERA AVX

获取价格

Ceramic Resonator, 8MHz Min, 20MHz Max
SSR-FREQDR KYOCERA AVX

获取价格

Ceramic Resonator, 20MHz Min, 60MHz Max
SSRH24NH-25205 KEMET

获取价格

SINGLE PHASE EMI FILTER,
SSRH24NH-50041 KEMET

获取价格

SINGLE PHASE EMI FILTER,
SSRH24NHS-20215 KEMET

获取价格

SINGLE PHASE EMI FILTER,