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SSM5N15FE PDF预览

SSM5N15FE

更新时间: 2024-09-25 04:02:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
5页 176K
描述
High Speed Switching Applications

SSM5N15FE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.26配置:COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F5
元件数量:2端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSM5N15FE 数据手册

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SSM5N15FE  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
SSM5N15FE  
High Speed Switching Applications  
Analog Switch Applications  
Unit: mm  
Small package  
Low ON resistance : R = 4.0 (max) (@V  
= 4 V)  
= 2.5 V)  
on  
GS  
GS  
: R = 7.0 (max) (@V  
on  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 Common)  
Characteristics  
Drain-Source voltage  
Symbol  
Rating  
Unit  
V
30  
±20  
V
V
DS  
Gate-Source voltage  
V
GSS  
DC  
I
100  
D
Drain current  
mA  
Pulse  
I
200  
DP  
Drain power dissipation (Ta = 25°C)  
Channel temperature  
P
(Note 1)  
150  
mW  
°C  
D
T
ch  
150  
Storage temperature range  
T
stg  
55~150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure  
rate, etc).  
TOSHIBA  
2-2P1B  
Weight: 0.003 g (typ.)  
Note 1: Total rating, mounted on FR4 board  
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 5)  
0.3 mm  
Marking  
Equivalent Circuit (top view)  
5
4
5
4
Q1  
Q2  
D P  
1
2
3
1
2
3
Handling Precaution  
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment  
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other  
objects that come into direct contact with devices should be made of anti-static materials.  
1
2007-11-01  

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