Datasheet > SSM09N90GW

SSM09N90GW

更新时间： 2024-02-09 13:07:47

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N-channel Enhancement-mode Power MOSFET

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SSM09N90GW 数据手册

SSM09N90GW

N-channel Enhancement-mode Power MOSFET

PRODUCT SUMMARY

DESCRIPTION

The SSM09N90GW acheives fast switching performance

with low gate charge without a complex drive circuit. It is

suitable for high voltage applications such as AC/DC

converters and offline power supplies.

BV_DSS

R_DS(ON)

I_D

900V

1.2W

8.6A

The SSM09N90GW is in a TO-247 (TO-3P) package,

which is widely used for commercial and industrial

applications, where the greater pin spacing is needed

to meet safety specifications. The through-hole package

is suitable for vertical mounting, where a small footprint

is required on the board, and/or an external heatsink is

to be attached.

Pb-free; RoHS-compliant TO-247

TO-247 (suffix W)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

900

Units

Drain-source voltage

Gate-source voltage

V_GS

±30

Continuous drain current, T = 25°C

I_D

8.6

T = 100°C

I_DM

P_D

Pulsed drain current¹

Total power dissipation, T = 25°C

240

Linear derating factor

Single pulse avalanche energy³

1.92

W/°C

E_AS

I_AS

Avalanche current

5.2

E_AR

T_STG

T_J

Repetitive avalanche energy

Storage temperature range

Operating junction temperature range

8.6

°C

-55 to 150

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Units

°C/W

ΘJC

ΘJA

Maximum thermal resistance, junction-case

Maximum thermal resistance, junction-ambient

0.52

Notes:

1. Pulse width must be limited to avoid exceeding the safe operating area.

2. Pulse width <300us, duty cycle <2%.

3. Starting Tj=25°C, V_DD=50V , L=6.8mH , R_G=25Ω , I_AS=5.2A.

8/31/2006 Rev.3.1

www.SiliconStandard.com

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