Datasheet > SSI4N90A

SSI4N90A

更新时间： 2024-11-23 23:34:23

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	358K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 4A I(D) \| TO-262AA

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数据手册

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SSI4N90A 数据手册

SSW/I4N90A

Advanced Power MOSFET

FEATURES

BV_DSS= 900 V

R_DS(on)= 5.0 W

I_D= 4 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 25 mA (Max.) @ V_DS= 900V

Low R_DS(ON): 4.181 W (Typ.)

D²-PAK

I²-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Drain-to-Source Voltage

Value

900

Units

V_DSS

Continuous Drain Current (T_C=25 C)

Continuous Drain Current (T_C=100 ^OC)

Drain Current-Pulsed

I_D

2.5

I_DM

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

424

E_AR

dv/dt

Repetitive Avalanche Energy

V/ns

Peak Diode Recovery dv/dt

1.5

3.1

120

0.96

Total Power Dissipation (T_A=25 C)

P_D

Total Power Dissipation (T_C=25 C)

W/ ^OC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

T_J, T_STG

- 55 to +150

300

^OC

Maximum Lead Temp. for Soldering

Purposes, 1/8“ from case for 5-seconds

T_L

Thermal Resistance

Symbol

Characteristic

Typ.

Max.

Units

R _q

Junction-to-Case

1.04

^OC /W

R _q

Junction-to-Ambient

R _q

62.5

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

12 3 4 5 6 7

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