Datasheet > SS83

SS83

更新时间： 2024-12-01 14:52:11

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森美特 - SUNMATE		/
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描述
Rectifier device Schottky Diode

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中文翻译

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数据手册

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SS83 数据手册

SS82 - SS810

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 100V

CURRENT: 8 .0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

SMC/DO-214AB

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

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Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.21 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol SS82 SS83 SS835 SS84 SS85 SS86 SS88 SS810 Unit

RRM

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RWM

100

R(RMS)

RMS Reverse Voltage

24.5

Average Rectified Output Current @T_L= 90°C

8.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

FSM

200.0

Forward Voltage

@I_F= 8.0A

0.85

0.65

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

1.0

°C/W

°C

Typical junction capacitance (Note1)

400

R^ꢀ

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

Note:

-65 to +125

-65 to +150

STG

°C

1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.P.C.B. mounted with 0.2x0.2

”(5.0x5.0mm) copper pad areas

1 of 2

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中文翻译

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