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SS6802 PDF预览

SS6802

更新时间: 2024-01-24 06:17:06
品牌 Logo 应用领域
SSC 电池
页数 文件大小 规格书
10页 247K
描述
TWO-CELL LITHIUM-ION BATTERY PROTECTION IC

SS6802 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

SS6802 数据手册

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SS6802  
TWO-CELL LITHIUM-ION  
BATTERY PROTECTION IC  
FEATURES  
DESCRIPTION  
Ultra-Low Quiescent Current at 10µA (VCC=7V,  
The SS6802 battery protection IC is designed  
VC=3.5V).  
to protect lithium-ion batteries from damage due  
Ultra-Low Power-Down Current at 0.2µA (VCC  
=3.8V, VC=1.9V).  
to  
overcharging,  
overdischarging,  
and  
overcurrent for two series cells in portable  
phones and laptop computers. It can be a part  
of the low-cost charge control system within a  
two-cell lithium-ion battery pack.  
Wide Supply Range: 2 to 18V.  
Precision Overcharge Protection Voltage  
4.35V ± 30mV for the SS6802A  
4.30V ± 30mV for the SS6802B  
Safe and full utilization charging is ensured by  
the accurate ±30mV overcharge detection.  
Three different specification values for  
overcharge protection voltage are provided for  
various protection requirements. The very low  
standby current drains little current from the  
cells while in storage.  
4.25V ± 30mV for the SS6802C  
Built-in Delay Circuits for Overcharge,  
Over-discharge and Overcurrent Protection.  
Overcharge and Overdischarge Delay Time  
can be Extended by External Capacitors.  
Built-in Cell-balancing Bleeding Network under  
Overcharge Condition.  
APPLICATIONS  
Pb-free; RoHS-compliant  
Protection IC for Two-Cell Lithium-Ion Battery  
Pack.  
TYPICAL APPLICATION CIRCUIT  
VBAT  
+
**R1  
8
5
3
1
7
VCC  
VC  
TC  
TD  
C1  
1 F  
µ
*CTC  
*CTD  
BATTERY 1  
BATTERY 2  
6
C2  
1 F  
µ
4
2
GND  
OD  
OC  
CS  
**R2  
R3  
1M  
R4  
1M  
M1  
CEM9926  
Q1  
SS6802  
R5  
1M  
C3  
0.01 F  
R6  
1K  
M2  
µ
VBAT  
-
CEM9926  
*CTC & CTD are optional for delay time adjustment.  
**R1 & R2: Refer application informations.  
Protection Circuit for Two-Cell Lithium-Ion Battery Pack  
02/26/2008 Rev.1.00  
www.SiliconStandard.com  
1

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