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SS36-HE3/9AT PDF预览

SS36-HE3/9AT

更新时间: 2024-11-04 18:42:59
品牌 Logo 应用领域
威世 - VISHAY 功效瞄准线光电二极管
页数 文件大小 规格书
4页 84K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 60V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

SS36-HE3/9AT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AB
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.07
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.75 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SS36-HE3/9AT 数据手册

 浏览型号SS36-HE3/9AT的Datasheet PDF文件第2页浏览型号SS36-HE3/9AT的Datasheet PDF文件第3页浏览型号SS36-HE3/9AT的Datasheet PDF文件第4页 
SS32 thru SS36  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AB (SMC)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
MECHANICAL DATA  
Case: DO-214AB (SMC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
VRRM  
IFSM  
20 V to 60 V  
100 A  
EAS  
20 mJ  
VF  
0.5 V, 0.75 V  
125 °C, 150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS32  
SS33  
S3  
SS34  
S4  
SS35  
S5  
SS36  
S6  
UNIT  
Device marking code  
S2  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
V
V
V
A
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
3.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
EAS  
100  
A
Non-repetitive avalanche energy at TA = 25 °C,  
20  
mJ  
IAS = 2.0 A, L = 10 mH  
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/µs  
°C  
- 55 to + 125  
- 55 to + 150  
TSTG  
- 55 to + 150  
°C  
Revision: 22-Mar-12  
Document Number: 88751  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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