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SS36 PDF预览

SS36

更新时间: 2024-11-09 06:13:55
品牌 Logo 应用领域
SSC 整流二极管光电二极管
页数 文件大小 规格书
2页 214K
描述
SCHOTTKY BARRIER RECTIFIERS

SS36 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
Reach Compliance Code:unknown风险等级:5.59
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
湿度敏感等级:3最大非重复峰值正向电流:100 A
元件数量:1最高工作温度:150 °C
最大输出电流:3 A最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

SS36 数据手册

 浏览型号SS36的Datasheet PDF文件第2页 
SS32-SS315  
SCHOTTKY BARRIER RECTIFIERS  
PRODUCT SUMMARY  
3.0 AMPS Surface Mount  
SMC/DO-214AB  
.126(3.20)  
.114(2.90)  
FEATURES  
.245(6.22)  
.220(5.59)  
For surface mounted application  
Easy pick and place  
Metal to silicon rectifier, majority carrier conduction  
Low power loss, high efficiency  
.280(7.11)  
.260(6.60)  
.012(.31)  
.006(.15)  
High current capability, low VF  
High surge current capability  
.103(2.62)  
.079(2.00)  
Plastic material used carriers Underwriters  
Laboratory Classification 94V-0  
Epitaxial construction  
.008(.20)  
.004(.10)  
.063(1.6)  
.039(1.0)  
High temperature soldering:  
260oC / 10 seconds at terminals  
.320(8.13)  
.305(7.75)  
Dimensions in inches and (millimeters)  
MECANICAL DATA  
Case: JEDEC DO-214AB Molded plastic  
Terminals: Pure tin plated, lead free.  
Polarity: Indicated by cathode band  
Pb-free; RoHS-compliant  
Packaging: 16mm tape per EIA STD RS-481  
Weight: 0.21gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol SS SS SS SS SS SS SS SS  
Type Number  
Units  
32  
20  
14  
20  
33  
30  
21  
30  
34  
40  
28  
40  
35  
50  
35  
50  
36  
60  
42  
60  
39 310 315  
90 100 150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
V
V
VRRM  
VRMS  
VDC  
63  
70 105  
Maximum DC Blocking Voltage  
90 100 150  
Maximum Average Forward Rectified  
Current at TL(See Fig. 1)  
3.0  
A
A
I(AV)  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
100  
70  
IFSM  
Maximum Instantaneous Forward Voltage  
o
V
(Note 1)  
IF= 3.0A @ 25 C  
VF  
0.5  
0.4  
0.75  
0.65  
0.85  
0.70  
0.1  
0.5  
0.95  
0.80  
o
@ 100 C  
o
0.5  
Maximum DC Reverse Current @ T =25 C at  
A
mA  
mA  
IR  
o
Rated DC Blocking Voltage  
@ T =125 C  
A
10  
5
Typical Thermal Resistance ( Note 2 )  
R
17  
55  
o
θJL  
C/W  
R
θJA  
o
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +125  
-55 to +150  
-55 to +150  
C
o
TSTG  
C
Notes:  
1. Pulse Test with PW=300 usec, 1% Duty Cycle  
04/05/2007 Rev.1.00  
www.SiliconStandard.com  
1

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