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SS248KSTT PDF预览

SS248KSTT

更新时间: 2022-02-26 10:43:49
品牌 Logo 应用领域
SECELECTRONICS /
页数 文件大小 规格书
10页 255K
描述
CMOS Omnipolar High Sensitivity Micropower Hall Switch

SS248KSTT 数据手册

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SS248  
CMOS Omnipolar High Sensitivity Micropower Hall Switch  
Features  
Micropower consumption for battery powered applications  
Omnipolar, output switches with absolute value of North or South pole from magnet  
Operation down to 2.5V  
High sensitivity for direct reed switch replacement applications  
3 pin SOT23 (suffix SO)  
3 pin SIP (suffix UA)  
General Description  
The SS248 Omnipolar Hall effect sensor IC is fabri-  
cated from mixed signal CMOS technology .It incor-  
porates advanced chopper-stabilization techniques to  
provide accurate and stable magnetic switch points.  
The circuit design provides an internally controlled  
clocking mechanism to cycle power to the Hall ele-  
ment and analog signal processing circuits. This  
serves to place the high current-consuming portions  
of the circuit into a “Sleep” mode. Periodically the  
device is “Awakened” by this internal logic and the  
magnetic flux from the Hall element is evaluated  
against the predefined thresholds. If the flux density  
is above or below the Bop/Brp thresholds then the  
output transistor is driven to change states according-  
ly. While in the “Sleep” cycle the output transistor is  
latched in its previous state. The design has been op-  
timized for service in applications requiring extended  
operating lifetime in battery powered systems.  
The output transistor of the SS248 will be latched on  
(Bop) in the presence of a sufficiently strong South or  
North magnetic field facing the marked side of the  
package. The output will be latched off (Brp) in the  
absence of a magnetic field.  
Applications  
Solid state switch  
Handheld Wireless Handset Awake Switch  
Lid close sensor for battery powered devices  
Magnet proximity sensor for reed switch replacement in low duty cycle applications  
1
V3.10 Nov 1, 2013  

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