Datasheet > SS24-M3

SS24-M3

更新时间： 2024-11-17 01:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	90K
描述
Surface Mount Schottky Barrier Rectifier

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中文翻译

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数据手册

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SS24-M3 数据手册

SS22-M3, SS23-M3, SS24-M3, SS25-M3, SS26-M3

www.vishay.com

Vishay General Semiconductor

Surface Mount Schottky Barrier Rectifier

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low power losses, high efficiency

• Low forward voltage drop

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AA (SMB)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I_F(AV)

2.0 A

MECHANICAL DATA

V_RRM

I_FSM

20 V, 30 V, 40 V, 50 V, 60 V

75 A

Case: DO-214AA (SMB)

Molding compound meets UL 94 V-0 flammability rating

V_F

0.50 V, 0.70 V

150 °C

Base P/N-M3

- halogen-free, RoHS-compliant, and

T_Jmax.

Package

Diode variations

commercial grade

DO-214AA (SMB)

Single

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test

TYPICAL APPLICATIONS

Polarity: Color band denotes cathode end



For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS22

SS23

SS24

SS25

SS26

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Max. average forward rectified current at T_L(fig. 1)

I_F(AV)

2.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

E_AS

V_C

Non-repetitive avalanche energy at T_A= 25 °C,

I_AS= 2.0 A, L = 10 mH

Electrostatic discharge capacitor voltage

human body model: C = 100 pF, R = 1.5 k

8.0

Voltage rate of change (rated V_R)

Operating junction temperature range

Storage temperature range

dV/dt

T_J

10 000

V/μs

°C

-65 to +150

T_STG

°C

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

TEST

CONDITIONS

PARAMETER

SYMBOL SS22

SS23

SS24

SS25

SS26

UNIT

Maximum instantaneous forward voltage ⁽¹⁾

2.0 A

V_F

0.5

0.7

T_A= 25 °C

T_A= 100 °C

0.4

Maximum DC reverse current at rated DC

blocking voltage ⁽¹⁾

I_R

Note

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 04-Aug-15

Document Number: 89278

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

中文翻译

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与SS24-M3相关器件

型号	品牌	获取价格	描述	数据表
SS24Q	YANGJIE	获取价格	SMB
SS24Q-L	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SS24S	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS24S-61HE3J_A/I	VISHAY	获取价格	DIODE SCHOTTKY 40V 2A DO214AC
SS24S-E3/5AT	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS24S-E3/61T	VISHAY	获取价格	Surface Mount Schottky Barrier Rectifier
SS24SHE3/5AT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AC, SMA, 2 P
SS24SHE3/61T	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
SS24SHE3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 40V V(RRM), Silicon, DO-214AC, SMA, 2 P
SS24SHE3_B/I	VISHAY	获取价格	Rectifier Diode,

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