SS1H4LS - SS1H20LS
Taiwan Semiconductor
CREAT BY ART
1A, 40V - 200V Surface Mount Schottky Barrier Rectifiers
FEATURES
- Ideal for automated placement
- Compact package size, profile <0.85mm
- Ultra low leakage current
- High surge current capability
- Low power loss, high efficiency
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TYPICAL APPLICATIONS
SOD-123HE
The devices are designed for high frequency miniature switched
mode power supplies. Its excellent high switching and ultra low
leakage current are ideal solution for the polarity protection,
especially for rail to rail protection in automotive application.
MECHANICAL DATA
Case: SOD-123HE
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 21mg (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SS1H4
SS1H6 SS1H10 SS1H15 SS1H20
PARAMETER
SYMBOL
UNIT
LS
1H4LS
40
LS
1H6LS
60
LS
1H10LS
100
LS
1H15LS
150
LS
1H20LS
200
Marking code
V
V
V
V
A
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
28
42
70
105
140
Maximum DC blocking voltage
Maximum average forward rectified current
40
60
100
150
200
IF(AV)
1
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
VF
IR
30
A
V
Maximum instantaneous forward voltage
(Note 1)
@1.0A
0.65
0.70
0.80
1
0.85
TJ=25°C
Maximum reverse current @ rated VR
TJ=125°C
µA
0.3
0.2
0.1
mA
RθJL
RθJA
20
72
Typical thermal resistance
°C/W
Operating junction temperature range
Storage temperature range
TJ
- 55 to +150
- 55 to +150
°C
°C
TSTG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Document number: DS_D0000121
Version: A15