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SS1H15LS PDF预览

SS1H15LS

更新时间: 2024-10-01 01:23:07
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页数 文件大小 规格书
4页 215K
描述
1A, 40V - 200V Surface Mount Schottky Barrier Rectifiers

SS1H15LS 数据手册

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SS1H4LS - SS1H20LS  
Taiwan Semiconductor  
CREAT BY ART  
1A, 40V - 200V Surface Mount Schottky Barrier Rectifiers  
FEATURES  
- Ideal for automated placement  
- Compact package size, profile <0.85mm  
- Ultra low leakage current  
- High surge current capability  
- Low power loss, high efficiency  
- Compliant to RoHS Directive 2011/65/EU and  
in accordance to WEEE 2002/96/EC  
- Halogen-free according to IEC 61249-2-21  
TYPICAL APPLICATIONS  
SOD-123HE  
The devices are designed for high frequency miniature switched  
mode power supplies. Its excellent high switching and ultra low  
leakage current are ideal solution for the polarity protection,  
especially for rail to rail protection in automotive application.  
MECHANICAL DATA  
Case: SOD-123HE  
Molding compound, UL flammability classification rating 94V-0  
Moisture sensitivity level: level 1, per J-STD-020  
Part no. with suffix "H" means AEC-Q101 qualified  
Packing code with suffix "G" means green compound (halogen-free)  
Terminal: Matte tin plated leads, solderable per JESD22-B102  
Meet JESD 201 class 2 whisker test  
Polarity: Indicated by cathode band  
Weight: 21mg (approximately)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)  
SS1H4  
SS1H6 SS1H10 SS1H15 SS1H20  
PARAMETER  
SYMBOL  
UNIT  
LS  
1H4LS  
40  
LS  
1H6LS  
60  
LS  
1H10LS  
100  
LS  
1H15LS  
150  
LS  
1H20LS  
200  
Marking code  
V
V
V
V
A
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
28  
42  
70  
105  
140  
Maximum DC blocking voltage  
Maximum average forward rectified current  
40  
60  
100  
150  
200  
IF(AV)  
1
Peak forward surge current, 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
VF  
IR  
30  
A
V
Maximum instantaneous forward voltage  
(Note 1)  
@1.0A  
0.65  
0.70  
0.80  
1
0.85  
TJ=25°C  
Maximum reverse current @ rated VR  
TJ=125°C  
µA  
0.3  
0.2  
0.1  
mA  
RθJL  
RθJA  
20  
72  
Typical thermal resistance  
°C/W  
Operating junction temperature range  
Storage temperature range  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
Note 1: Pulse test with PW=300μs, 1% duty cycle  
Document number: DS_D0000121  
Version: A15  

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