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SS1H9HE3_B/I

更新时间： 2024-10-02 21:00:55
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 77K
描述
Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

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SS1H9HE3_B/I 技术参数

生命周期：Active包装说明：R-PDSO-C2
Reach Compliance Code：unknownECCN代码：EAR99
Factory Lead Time：12 weeks风险等级：5.69
其他特性：FREE WHEELING DIODE, LOW POWER LOSS配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
元件数量：1端子数量：2
最高工作温度：175 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE参考标准：AEC-Q101
最大重复峰值反向电压：90 V表面贴装：YES
技术：SCHOTTKY端子形式：C BEND
端子位置：DUALBase Number Matches：1

SS1H9HE3_B/I 数据手册

 浏览型号SS1H9HE3_B/I的Datasheet PDF文件第2页浏览型号SS1H9HE3_B/I的Datasheet PDF文件第3页浏览型号SS1H9HE3_B/I的Datasheet PDF文件第4页 
SS1H9, SS1H10  
Vishay General Semiconductor  
www.vishay.com  
High-Voltage Surface Mount Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low powevr losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
DO-214AC (SMA)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V, 100 V  
50 A  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
0.62 V  
IR  
1.0 μA  
MECHANICAL DATA  
TJ max.  
175 °C  
Package  
DO-214AC (SMA)  
Single  
Case: DO-214AC (SMA)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade   
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“_X” denotes revision code e.g. A, B,...)  
Diode variations  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS1H9  
S9  
SS1H10  
S10  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
VRWM  
VDC  
90  
100  
V
V
V
A
90  
100  
90  
100  
IF(AV)  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Storage temperature range  
IRRM  
TSTG  
TJ  
1.0  
A
-65 to +175  
175  
°C  
°C  
Maximum operating temperature  
Revision: 18-Dec-14  
Document Number: 88747  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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