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SS1H9-M3/61T PDF预览

SS1H9-M3/61T

更新时间： 2024-10-02 15:52:51
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 86K
描述
DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Signal Diode

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SS1H9-M3/61T 技术参数

生命周期：Active零件包装代码：DO-214AC
包装说明：R-PDSO-C2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.66
其他特性：FREE WHEELING DIODE, LOW POWER LOSS配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JEDEC-95代码：DO-214ACJESD-30 代码：R-PDSO-C2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：175 °C最大输出电流：1 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大重复峰值反向电压：90 V
表面贴装：YES技术：SCHOTTKY
端子面层：Matte Tin (Sn)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
Base Number Matches：1

SS1H9-M3/61T 数据手册

 浏览型号SS1H9-M3/61T的Datasheet PDF文件第2页浏览型号SS1H9-M3/61T的Datasheet PDF文件第3页浏览型号SS1H9-M3/61T的Datasheet PDF文件第4页 
SS1H9, SS1H10  
Vishay General Semiconductor  
www.vishay.com  
High-Voltage Surface Mount Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
Available  
• High surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMA (DO-214AC)  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
For use in low voltage high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V, 100 V  
50 A  
MECHANICAL DATA  
Case: SMA (DO-214AC)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
0.62 V  
IR  
1.0 μA  
TJ max.  
175 °C  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
Package  
SMA (DO-214AC)  
Single  
Diode variations  
(“_X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS1H9  
S9  
SS1H10  
S10  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
VRWM  
VDC  
90  
100  
V
V
V
A
90  
100  
90  
100  
IF(AV)  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Storage temperature range  
IRRM  
TSTG  
TJ  
1.0  
A
-65 to +175  
175  
°C  
°C  
Maximum operating temperature  
Revision: 21-Jul-17  
Document Number: 88747  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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