SS1H9-E3

更新时间： 2024-09-30 12:15:27

品牌	Logo	应用领域
威世 - VISHAY		整流二极管高压
页数	文件大小	规格书
4页	86K
描述
High-Voltage Surface Mount Schottky Rectifier

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技术参数
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SS1H9-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.83
Is Samacsys：	N	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	0.62 V
最大非重复峰值正向电流：	50 A	元件数量：	1
最高工作温度：	175 °C	最大输出电流：	1 A
最大重复峰值反向电压：	90 V	子类别：	Rectifier Diodes
表面贴装：	YES	技术：	SCHOTTKY
Base Number Matches：	1

SS1H9-E3 数据手册

SS1H9, SS1H10

Vishay General Semiconductor

www.vishay.com

High-Voltage Surface Mount Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Low profile package

• Ideal for automated placement

• Guardring for overvoltage protection

• Low powevr losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High surge capability

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

DO-214AC (SMA)

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

V_RRM

I_FSM

V_F

90 V to 100 V

50 A

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3

RoHS-compliant, commercial grade

0.62 V

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B, .....)

I_R

1.0 µA

T_Jmax.

175 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS1H9

SS1H10

S10

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current (fig. 1)

V_RRM

V_RWM

V_DC

100

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Peak repetitive reverse surge current at t_p= 2.0 μs, 1 kHz

Storage temperature range

I_RRM

T_STG

T_J

1.0

- 65 to + 175

175

°C

Maximum operating temperature

Revision: 14-Dec-12

Document Number: 88747

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SS1H9-E3相关器件

型号	品牌	获取价格	描述	数据表
SS1H9-E3/5AT	VISHAY	获取价格	DIODE SCHOTTKY 90V 1A DO214AC
SS1H9-E3/61T	VISHAY	获取价格	Diode Schottky 90V 1A 2-Pin SMA T/R
SS1H9-HE3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, LEAD FREE, PLASTI
SS1H9HE3/5AT	VISHAY	获取价格	SIGNAL DIODE
SS1H9-HE3/5AT	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, P
SS1H9HE3/61T	VISHAY	获取价格	DIODE SCHOTTKY 90V 1A DO214AC
SS1H9-HE3/61T	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, P
SS1H9HE3_A/H	VISHAY	获取价格	DIODE SCHOTTKY 90V 1A DO214AC
SS1H9HE3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
SS1H9HE3_B/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

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