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SS1H10-HE3 PDF预览

SS1H10-HE3

更新时间: 2024-09-30 21:11:23
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 351K
描述
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

SS1H10-HE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.2
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:50 A元件数量:1
端子数量:2最高工作温度:175 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

SS1H10-HE3 数据手册

 浏览型号SS1H10-HE3的Datasheet PDF文件第2页浏览型号SS1H10-HE3的Datasheet PDF文件第3页浏览型号SS1H10-HE3的Datasheet PDF文件第4页 
SS1H9 & SS1H10  
Vishay General Semiconductor  
High-Voltage Surface Mount Schottky Rectifier  
High Barrier Tecnology for improved high  
temperature performance  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V to 100 V  
50 A  
DO-214AC (SMA)  
0.62 V  
IR  
1.0 µA  
Tj max.  
175 °C  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current  
Polarity: Color band denotes the cathode end  
• High surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C 40 seconds  
Typical Applications  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device marking code  
Symbol  
SS1H9  
S9  
SS1H10  
S10  
Unit  
Maximum repetitive peak reverse voltage  
VRRM  
VRWM  
VDC  
90  
100  
V
V
V
A
A
Working peak reverse voltage  
90  
90  
100  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current (see Fig. 1)  
IF(AV)  
IFSM  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHz  
Storage temperature range  
IRRM  
TSTG  
TJ  
1.0  
A
- 65 to + 175  
175  
°C  
°C  
Maximum operating temperature  
Document Number 88747  
21-Oct-05  
www.vishay.com  
1

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