Datasheet > SS18

SS18

更新时间： 2024-11-16 09:06:27

品牌	Logo	应用领域
WTE		肖特基二极管
页数	文件大小	规格书
4页	45K
描述
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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SS18 数据手册

WTE

POWER SEMICONDUCTORS

1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

SS12 – S100

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

Surge Overload Rating to 30A Peak

For Use in Low Voltage Application

Guard Ring Die Construction

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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SMA/DO-214AC

Mechanical Data

Dim

Min

2.50

4.00

1.20

0.152

4.80

2.00

0.051

0.76

Max

2.90

4.60

1.60

0.305

5.28

2.44

0.203

1.52

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Characteristic

Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current @T_L= 75°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.50

0.70

0.85

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

0.5

R^ꢀ^JL

R^ꢀ^JA

Typical Thermal Resistance (Note 1)

°C/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

SS12 – S100

1 of 4

12 3 4

中文翻译

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