Datasheet > SS18

SS18

更新时间： 2024-11-16 09:06:27

品牌	Logo	应用领域
金誉半导体 - HTSEMI		/
页数	文件大小	规格书
2页	611K
描述
1 Amp Schottky Rectifier 20 to 100 Volts

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中文翻译

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数据手册

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SS18 数据手册

SS12 THRU SS110

Features

Schottky Barrier Rectifier

Guard Ring Protection

Low Forward Voltage

Reverse Energy Tested

High Current Capability

Extremely Low Thermal Resistance

1 Amp Schottky

Rectifier

20 to 100 Volts

Maximum Ratings

DO-214AC

Operating Temperature: -55°C to +125°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 35 °C/W Junction To Lead

Cathode Band

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

20V

Maximum

RMS

Maximum

Blocking

Voltage

20V

30V

40V

50V

60V

80V

100V

Catalog

Number

Voltage

SS12

SS13

SS14

SS15

SS16

SS18

SS110

SS12

SS13

SS14

SS15

SS16

SS18

SS110

14V

21V

28V

35V

42V

56V

70V

30V

40V

50V

60V

80V

100V

Electrical Characteristics @ 25 C Unless Otherwise Specified

DIMENSIONS

Average Forward

Current

I_F(AV)

1.0A

T_J= 100°C

INCHES

MIN

DIM

MAX

4.50

2.80

2.42

5.56

1.80

0.203

0.305

NOTE

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

I_FSM

30A

8.3ms, half sine

0.157

0.177

0.110

0.096

0.222

0.071

0.008

0.012

0.060

3.99

2.54

1.98

4.93

1.40

0.100

0.078

0.194

0.055

0.006

0.030

0.152

0.76

1.52

SS12

SS13

SS14

V_F

.45V

.55V

.60V

.70V

.85V

I_FM= 1.0A;

T_J= 25°C*

SS15-16

SS18-110

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Typical Junction

Capacitance

SS12

I_R

0.5mA

20mA

T_A= 25°C

T_A= 100°C

C_J

230pF

50pF

Measured at

1.0MHz, V_R=4.0V

SS13-SS110

*Pulse test: Pulse width 300 msec, Duty cycle 2%

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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