Datasheet > SS13FP

SS13FP

更新时间： 2025-08-18 11:14:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	247K
描述
1 A、30 V 表面贴装肖特基势垒整流器

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中文翻译

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数据手册

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SS13FP 数据手册

Surface Mount Schottky

Barrier Rectifiers

1 A, 20 V - 150 V

SS12FP - S115FP

Features

www.onsemi.com

• Larger Cathode Pad for Improved Power Dissipation

• Ultra Thin Profile − Package Height < 1.0 mm

• High Surge Current Capability

• Low Power Loss, High Efficiency

• UL Flammability 94V−0 Classification

• MSL 1 per J−STD−020

Band Indicates Cathode

• AEC−Q101 Qualified

SOD−123EP

CASE 425AC

• These Devices are Pb−Free and are RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Value

SS12

SS13

SS14

SS16

S110

S115

Symbol

Parameter

Unit

RRM

Repetitive

100

150

Peak

Cathode

Anode

Reverse Voltage

RMS

105

150

RMS

Reverse Voltage

MARKING DIAGRAM

100

Blocking Voltage

Average Forward

Rectified Current

F(AV)

&ZXFP&G

Peak Forward

Surge Current:

8.3 ms Single

Half Sine−Wave

Superimposed on

Rated Load

FSM

XFP

= Binary Calendar Year Coding

= Assembly Plant Code

= Specific Device Code

X = 0, 2, 3, 4, 6, A

Operating

Junction

Temperature

Range

−55 to +125

−55 to +150

°C

= Single Digit Week Code

Storage

Temperature

Range

−55 to +150

STG

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

May, 2021 − Rev. 2

S110FP/D

12 3 4 5 6

中文翻译

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