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SS12-E3/5AT

更新时间: 2024-11-30 22:56:35
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
5页 1146K
描述
DIODE SCHOTTKY 20V 1A DO214AC

SS12-E3/5AT 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.23其他特性:FREE WHEELING DIODE, LOW POWER LOSS
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.5 V
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:40 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:20 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

SS12-E3/5AT 数据手册

 浏览型号SS12-E3/5AT的Datasheet PDF文件第2页浏览型号SS12-E3/5AT的Datasheet PDF文件第3页浏览型号SS12-E3/5AT的Datasheet PDF文件第4页浏览型号SS12-E3/5AT的Datasheet PDF文件第5页 
SS12, SS13, SS14, SS15, SS16  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Schottky Barrier Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
Available  
SMA (DO-214AC)  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
Cathode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
TYPICAL APPLICATIONS  
Design Tools  
Related  
Documents  
3D Models  
Simulation  
Tools  
Models  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
A
T
Application  
Notes  
Technical  
Notes  
Marking  
MECHANICAL DATA  
Case: SMA (DO-214AC)  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
IF(AV)  
1.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V, 50 V, 60 V  
40 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF  
0.50 V, 0.75 V  
150 °C  
TJ max.  
Package  
Circuit configuration  
SMA (DO-214AC)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS12  
SS13  
S3  
SS14  
S4  
SS15  
S5  
SS16  
S6  
UNIT  
Device marking code  
S2  
V
V
V
V
A
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
Revision: 23-Apr-2020  
Document Number: 88746  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

SS12-E3/5AT 替代型号

型号 品牌 替代类型 描述 数据表
SS12 ONSEMI

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